全SiC结构高温压力传感器制备及测试  

Preparation and Testing of High Temperature Pressure Sensor with Full SiC Structure

作　　者：梁晓波 黄漫国[1,2] 刘德峰 盛天宇[3] 李健 蒋永刚 LIANG Xiao-bo;HUANG Man-guo;LIU De-feng;SHENG Tian-yu;LI Jian;JIANG Yong-gang(AVIC Beijing Changcheng Aeronautical Measurement and Control Technology Research Institute,Beijing 101111,China;Aviation Key Laboratory of Science and Technology on Special Condition Monitoring Sensor Technology,Beijing 101111,China;Institute of Bionic and Micro-Nano Systems,Beihang University,Beijing 100191,China)

机构地区：[1]航空工业北京长城航空测控技术研究所,北京101111 [2]状态监测特种传感技术航空科技重点实验室,北京101111 [3]北京航空航天大学仿生与微纳系统研究所,北京100191

出　　处：《测控技术》2022年第6期15-18,25,共5页Measurement & Control Technology

基　　金：装备发展部装备预研共用技术项目(41423020309)。

摘　　要：面向极端条件下原位压力测量技术的需求,设计了一种光纤法珀式碳化硅(SiC)高温压力传感器。采用全SiC真空法珀(F-P)腔结构,以最大限度发挥SiC材料优异的耐高温特性。通过用反应离子刻蚀和高温高压键合技术成功制备了全SiC式高温压力传感器,实现高温环境下的原位压力测量。实验结果表明,该传感器能够实现650℃高温环境下6 MPa的压力测量。650℃下传感器的光谱压力灵敏度达到4.05 nm/MPa,温度压力交叉灵敏度为1.09×10^(-3)MPa/℃。研究成果为面向高温环境下压力原位测量的传感器开发提供了思路。In order to meet the needs of in-situ pressure direct measurement technology under extreme conditions, a fiber-optic Fabry-Perot SiC high-temperature pressure sensor is designed.All SiC vacuum Fabry-Perot cavity structure is adopted to maximize the excellent high temperature resistance of SiC material.All SiC high temperature pressure sensor is successfully fabricated by reactive ion etching and high temperature and high pressure bonding technology, and in-situ pressure measurement in high temperature environment is realized.The experimental results show that the sensor can measure the pressure of 6 MPa at 650 ℃.The spectral pressure sensitivity of the sensor reaches 4.05 nm/MPa at 650 ℃,and the temperature-pressure cross sensitivity is 1.09×10^(-3)MPa/℃.The results can provide suggestions for the design of sensors for in-situ pressure measurement in high temperature environment.

关 键 词：压力传感器 碳化硅 反应性离子刻蚀 直接键合 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]