基于深度优先搜索的全芯片光源掩模优化关键图形筛选方法  

Critical Pattern Selection Method for Full-Chip Source and Mask Optimization Based on Depth-First Search

作　　者：杨欣华 李思坤[1,2] 廖陆峰 张利斌 张双[3] 张生睿 施伟杰 韦亚一 王向朝[1,2] Yang Xinhua;Li Sikun;Liao Lufeng;Zhang Libin;Zhang Shuang;Zhang Shengrui;Shi Weijie;Wei Yayi;Wang Xiangzhao(Laboratory of Information Optics and Opto-Electronic Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;DongFang JingYu,an ElectromLimited,Beijing 100176,China)

机构地区：[1]中国科学院上海光学精密机械研究所信息光学与光电技术实验室,上海201800 [2]中国科学院大学材料与光电研究中心,北京100049 [3]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [4]东方晶源微电子科技(北京)有限公司,北京100176

出　　处：《光学学报》2022年第10期202-211,共10页Acta Optica Sinica

基　　金：国家科技重大专项(02专项)(2017ZX02101004-002,2017ZX02101004-003,2017ZX02101004);上海市自然科学基金(17ZR1434100)。

摘　　要：提出一种基于深度优先搜索的全芯片光源掩模优化关键图形筛选方法。所提方法采用掩模频谱的投影边界以及增长因子表征掩模的衍射频谱特征。设计了基于深度优先搜索的关键图形筛选算法,实现了全芯片光源掩模优化关键图形筛选,获得了所有关键图形组。相比于现有同类方法,所提方法可以获得覆盖频率分组的所有关键图形组,进而选出更优关键图形组。采用荷兰ASML公司的商用计算光刻软件Tachyon Tflex对所提方法进行了仿真验证,仿真结果表明所提方法获得的工艺窗口优于Tachyon Tflex方法,与现有方法相比,所提方法筛选出的关键图形结果更优。A critical pattern selection method for full-chip source and mask optimization based on depth-first search is proposed.The growth factor and projection boundary of mask spectra are used to describe the diffraction spectrum characteristics.The critical pattern selection method based on depth-first search is designed to realize the critical pattern selection for full-chip source and mask optimization,so as to obtain all critical pattern groups.Compared to existing methods of the same kind,the proposed method can obtain all critical pattern groups covering all frequency groups.Tachyon Tflex,one of the state-of-the-art commercial computational lithography software from Netherlands ASML company,is used to simulate and verify the proposed method.The results show that the process window obtained by the proposed method is better than that of the Tachyon Tflex method.The proposed method shows better results of selected critical patterns than the reported methods.

关 键 词：光学设计 图形筛选 分辨率增强技术 光源掩模联合优化 深度优先搜索 

分 类 号：TN305.7[电子电信—物理电子学]