Si_(x)N_(y)沉积参数对量子阱混杂效果的影响  

Influence of Si_(x)N_(y) Deposition Parameters on Intermixing of Quantum Wells

作　　者：王予晓 朱凌妮[1] 仲莉[1,3] 林楠 刘素平[1] 马骁宇[1,3] Wang Yuxiao;Zhu Lingni;Zhong Li;Lin Nan;Liu Suping;Ma Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083 [2]中国科学院大学电子电气与通信工程学院,北京100049 [3]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《光学学报》2022年第10期265-269,共5页Acta Optica Sinica

基　　金：广东省重点领域研发计划项目(2020B090922003)。

摘　　要：Si_(x)N_(y)常被用作量子阱混杂(QWI)的抑制材料,为了探索Si_(x)N_(y)的生长工艺对InGaAs/GaAs量子阱结构混杂效果的影响,对等离子体增强化学气相沉积(PECVD)法的工艺参数,如沉积时间、SiH_(4)流量以及射频(RF)功率进行一系列实验。实验结果表明:Si_(x)N_(y)可以较好地保护量子阱,但其厚度对QWI抑制效果的影响较小;当SiH_(4)流量较大时,Si_(x)N_(y)中富Si,退火过程中Si可能发生扩散而与P型欧姆接触层形成电补偿,同时诱导量子阱混杂,使其波长发生较大蓝移;减少SiH_(4)流量,Si_(x)N_(y)中Si的含量降低,折射率降低,但蓝移量仍较大;在一定范围内,蓝移量随着RF功率的增大而增大;当RF功率为50 W、SiH_(4)流量为50 sccm时,Si_(x)N_(y)起到较好的量子阱保护作用,蓝移量仅为14.1 nm。Si_(x)N_(y) is often used as the suppression material of quantum well intermixing(QWI).In order to explore the effect of Si_(x)N_(y) growth process on the intermixing effect of InGaAs/GaAs quantum well structure,a series of experiments are carried out on the process parameters of plasma enhanced chemical vapor deposition(PECVD)method,such as deposition time,SiH_(4) flow rate,and radio frequency(RF)power.The experimental results show that Si_(x)N_(y) can protect the quantum well well,but its thickness has little effect on the inhibition effect of QWI.When the SiH_(4) flow rate is large,Si is rich in Si_(x)N_(y),and Si may diffuse during annealing to form electrical compensation with P-type ohmic contact layer,and at the same time induce quantum well intermixing,resulting in a large blue shift of its wavelength.With the decreases of SiH_(4) flow rate,the content of Si in Si_(x)N_(y) decreases,and the refractive index decreases,but the blue shift is still large.In a certain range,the blue shift increases with the increase of RF power,and when the RF power is 50 W and the SiH_(4) flow rate is 50 sccm,Si_(x)N_(y) plays a better in quantum well protection,and the blue shift is only 14.1 nm.

关 键 词：薄膜 Si_(x)N_(y)量子阱混杂 INGAAS/GAAS 蓝移 PECVD 

分 类 号：TN314.3[电子电信—物理电子学] TN315.3