短路电流阈值对IGBT元胞热特性影响的研究  

Research on Influence of Short-circuit Current Threshold Value on Thermal Characteristics of IGBT Cells

作　　者：夏超 杨猛[1] 陈滔[1] 张明华[1] XIA Chao;YANG Meng;CHEN Tao;ZHANG Minghua(Beijing Satellite Corporation,China Academy of Space Technology,Beijing 100089,China)

机构地区：[1]中国空间技术研究院北京卫星制造厂,北京100089

出　　处：《新技术新工艺》2022年第5期39-44,共6页New Technology & New Process

摘　　要：简述了大功率IGBT短路机理的类型,从IGBT元胞本身的电流负载特性出发,分析了短路工况下的芯片自热效应,指出了IGBT短路承受能力的限制因素。以英飞凌公司的FF1400R17IP4功率模块为例,通过对芯片实际尺寸的分析得到了短路保护时间的常规方案,对元胞级建模仿真使IGBT在短路大电流工况下高温失效区的研究得到了进一步细化,说明了IGBT元胞热效应与母线电压的相关性,为后续的研究提供了支撑。The types of short-circuit mechanism of high-power IGBT were briefly described,and based on the current load characteristics of the IGBT cell itself,the self-heating effect of the chip under short-circuit conditions was analyzed,and the limiting factors of the short-circuit withstand capability of the IGBT were pointed out.Took Infineon FF1400R17IP4 power module for example,the traditional method of short-circuit protection time was obtained by analyzing the actual size of the chip.The research of IGBT high temperature failure area under short-circuit big current conditions had been further refined through cells modeling and simulation,and the correlation between the thermal effect of IGBT cells and the bus voltage was illustrated,which provided support for subsequent research.

关 键 词：短路机理 IGBT退饱和 短路阈值时间 IGBT短路能量 

分 类 号：TM921[电气工程—电力电子与电力传动]