光源掩模联合优化技术研究  

Research on Source and Mask Optimization

作　　者：廖陆峰 李思坤[1,2] 张子南 王向朝 Liao Lufeng;Li Sikun;Zhang Zinan;Wang Xiangzhao(Laboratory of Information Optics and Opto-Electronic Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海光学精密机械研究所信息光学与光电技术实验室,上海201800 [2]中国科学院大学材料与光电研究中心,北京100049

出　　处：《激光与光电子学进展》2022年第9期177-196,共20页Laser & Optoelectronics Progress

摘　　要：光刻机是集成电路制造的核心装备,光刻分辨率是光刻机的重要性能指标。作为提高光刻机分辨率的重要手段,分辨率增强技术可以推动芯片向更高集成度发展。光源掩模联合优化(SMO)通过同时优化光源和掩模图形提高光刻分辨率,是28 nm及以下技术节点必不可少的分辨率增强技术之一。光源与掩模的准确表征是SMO技术的基础,高效的优化算法是对光源和掩模进行优化的核心手段。SMO技术应用于全芯片的前提是进行关键图形筛选。本文回顾了SMO技术的发展历史,并结合本团队对SMO技术的研究,介绍了关键图形筛选方法、光源与掩模表征方法和优化算法的基本原理和国内外的研究进展。Lithography is the most important equipment in the manufacturing of very large-scale integrated circuits.Resolution is one of the important performance metrics of lithography.As an important means to improve the resolution of lithography,resolution enhancement techniques can promote the development of chips'integration.As one of resolution enhancement techniques,source and mask optimization(SMO)is indispensable in 28 nm technology node and beyond.It improves the resolution by simultaneously optimizing the source and mask.Accurate representation of source and mask is the basis of SMO,and efficient optimization algorithm is the core of SMO.The premise of full chip SMO is critical pattern selection.In this paper,the development history of SMO is reviewed.Combined with the research work of our group,the basic principles and research progress of the critical pattern selection method,source mask representation method,and optimization algorithm are reviewed.

关 键 词：光刻 分辨率增强技术 光源掩模联合优化 

分 类 号：TN305.7[电子电信—物理电子学]