光刻技术六十年  

Lithography Technology During the Past Six Decades

作　　者：陈宝钦[1,2] Chen Baoqin(Institute of Microelectronics(IMECAS),Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学集成电路学院,北京100049

出　　处：《激光与光电子学进展》2022年第9期508-528,共21页Laser & Optoelectronics Progress

摘　　要：当今世界离不开信息产业,信息产业离不开半导体集成电路芯片制造技术,即微电子技术。集成电路芯片制造工艺中最关键的就是光刻技术。光刻技术开始于1958年美国德克萨斯公司试制的世界上第一块平面集成电路,在短短的60年中,光刻分辨率极限一次又一次被突破,创造了人间奇迹。作为微电子技术工艺基础的光刻技术与微/纳米加工技术是人类迄今为止所能达到的精度最高的加工技术。光刻加工尺寸从百微米到10 nm,加工手段从钢板尺手术刀照相机到电子束光刻,光源波长从光学曝光到极紫外曝光。集成度提高了约百亿倍,特征尺寸线宽缩小到原来的约1/10000。随着纳米集成电路迅猛发展,光刻技术也从等效摩尔时代进入后摩尔时代。Nowadays,the world is inseparable from the information technology(IT),while IT is inseparable from the integrated circuit(IC)semiconductor manufacturing technology,that is,microelectronics technology.The most critical technology in IC semiconductor manufacturing is lithography.Lithography emerged in 1958 when Texas Instruments produced the world’s first planar IC.Over the past short 60 years,the lithography resolution limit has been broken again and again,creating a miracle on earth.As the basis of microelectronics technology,lithography and micro-nanofabrication technologies are the highest accuracy manufacturing techonologies so far.Lithography process sizes range from several hundredmicrons to 10 nanometers.Process methods develop from plate ruler scalpel and camera to electron beam lithography.Light source wavelengths range from optical exposure to extreme ultraviolet exposure.In the development process,integration increases by about ten billion times,while the characteristic dimension has been reduced to about one ten-thousandth of the original value.With the rapid development of IC,lithography has also moved from the era of equivalent Moore into the post-Moore era.

关 键 词：光刻技术 光学分辨率增强技术 下一代光刻 微纳米加工技术 

分 类 号：TN305.6[电子电信—物理电子学] TN305.7TN405