基于InP DHBT的K波段高线性功率放大器  

A K‑band Power Amplifier with High Linearity Based on InP DHBT

作　　者：许鑫东 郭润楠 张斌[1] XU Xindong;GUO Runnan;ZHANG Bin(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2022年第2期109-113,共5页Research & Progress of SSE

摘　　要：基于1.6μm InP DHBT工艺,研制了一款MMIC高线性功率放大器。功率放大器采用两级结构,两级管芯皆偏置在AB类状态。功率放大器末级采用RC等效模型进行非线性匹配降低损耗,管芯基极采用自适应线性偏置技术提高线性度和温度稳定性。该芯片的尺寸为2.0 mm×2.9 mm。装壳测试结果表明,在25.5~28.5 GHz频带内,饱和输出功率为23 dBm;经双音测试,输出功率回退2.5 dB后IMD3小于-30 dBc。A MMIC power amplifier(PA)with high linearity was designed and fabricated based on 1.6μm InP DHBT process.Two-stage topology was adopted in this PA and transistors of both stages were biased at class AB state.By employing RC equivalent model for nonlinear impedance matching in the final stage of the PA,power loss was decreased.Adaptive linear bias technique was adopted for transistor base to enhance linearity and temperature stability.The core area is 2.0 mm×2.9 mm.Over a 25.5-28.5 GHz frequency band,the PA obtains a 23 dBm output power after packing measurement.In two-tone test,the PA exhibits IMD3 of-30 dBc at 2.5 dB output back-off.

关 键 词：INP 高线性功率放大器 微波单片集成电路 

分 类 号：TN722[电子电信—电路与系统]