一种抗单粒子效应的加固技术研究  

Research on a Strengthening Technique against Single Event Effect

作　　者：齐贺飞[1] 王磊[1] 王鑫 王绍权[1] 张梦月 QI Hefei;WANG Lei;WANG Xin;WANG Shaoquan;ZHANG Mengyue(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团第十三研究所,河北石家庄050051

出　　处：《现代信息科技》2022年第6期41-45,共5页Modern Information Technology

摘　　要：针对数字波控电路在星载控制电路应用中存在的单粒子翻转效应问题,提出了一种基于DICE单元的双稳态D触发器设计改进,设计了一种能够抵御众多类型单粒子翻转效应的D触发器,并基于该D触发器,结合电路级单粒子加固技术设计了一款串并转换芯片。测试表明,采用改进D触发器结构的波控芯片能够抵御至少80 MeV的单粒子效应事件。芯片峰值功耗不大于10 mA,写入速率不低于10 MHz,功耗为1 mW/MHz。In view of the problem of single particle flip effect,which exits in the digital wave control circuit in load control circuit application,this paper puts forward a bistable D trigger design improvement based on DICE unit,designs a D trigger which can resist many types of single particle flip effect.And based on the D trigger,combined with circuit level single particle reinforcement technology,it designs a string and conversion chip.Tests show that a wave-control chip with an improved D-trigger structure can resist the Single Event Effect events of 80 MeV at least.The peak power consumption of the chip is not more than 10 mA,the write rate is not less than 10 MHz,and the power consumption is 1 mW/MHz.

关 键 词：单粒子效应 抗辐照 三模冗余 

分 类 号：TN79[电子电信—电路与系统]