不同钝化层结构对HgCdTe热退火Hg空位调控影响  

The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing

作　　者：沈川[1] 刘仰融 孙瑞赟[1] 卜顺栋 陈路[1,2] 何力 SHEN Chuan;LIU Yang-Rong;SUN Rui-Yun;BU Shun-Dong;CHEN Lu;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China)

机构地区：[1]红外材料与器件重点实验室,中科院上海技术物理研究所,上海200083 [2]国科大杭州高等研究院,浙江杭州310024

出　　处：《红外与毫米波学报》2022年第2期425-429,共5页Journal of Infrared and Millimeter Waves

基　　金：中国科学院青年创新促进会项目;上海市自然科学基金资助项目(21ZR1473500)。

摘　　要：对不同钝化层结构的分子束外延(MBE)生长的HgCdTe外延材料的Hg空位浓度控制进行研究。获得了更高Hg空位浓度调控范围的外延材料,为后续新型焦平面器件的研发提供基础。研究发现,在热退火过程中,HgCdTe外延材料的Hg空位浓度的变化随着钝化层结构的不同而发生改变。且这种改变是因为HgCdTe表层的钝化层的存在改变了原始热退火的平衡态过程。同时,通过二次离子质谱(SIMS)测试以及相应的理论拟合进行了验证。The control of Hg vacancy concentration in HgCdTe grown by MBE with different passivation layer structures was studied. Higher Hg vacancy concentration in HgCdTe was obtained,which provides a basis for the subsequent research and development of new focal plane devices. It was found that the change of Hg vacancy concentration in HgCdTe varies with the structure of passivation layer during thermal annealing. The change is because the existence of the passivation layer of the HgCdTe surface layer changes the equilibrium process of the original thermal annealing. At the same time,the secondary ion mass spectrometry(SIMS)test and the corresponding theoretical fitting were verified the results.

关 键 词：碲镉汞 Hg空位 钝化层 热退火 

分 类 号：O471.5[理学—半导体物理] TN305.3[理学—物理]