SiO_(2)/SiC界面工艺技术研究现状及新进展  

Research Status and New Progress of SiO_(2)/SiC Interface Technology

作　　者：刘佳霖 刘英坤[1] Liu Jialin;Liu Yingkun(The 13^(th) Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2022年第5期346-353,共8页Semiconductor Technology

摘　　要：从SiO_(2)/SiC界面工艺技术角度着重介绍了其降低界面态密度、提升沟道电子迁移率及改善SiC MOSFET性能稳定性的机理,分析了国内外研究中有关SiC材料、SiC晶面、氧化层制备工艺和氧化后退火(POA)条件对SiO_(2)/SiC界面的影响,总结了近年来提升SiO_(2)/SiC界面性能的研究进展。最后分析了多种降低界面态密度的工艺方法及其优缺点,指出了未来通过结合这些工艺方法进一步改善界面质量的发展方向。The mechanisms of reducing the interface state density,improving the channel electron mobility and improving the performance stability of SiC MOSFETs are emphatically introduced from the perspective of SiO_(2)/SiC interface process.The effects of SiC material,SiC crystal plane,oxidation layer preparation process and post-oxidation annealing(POA)conditions on SiO_(2)/SiC interface from the research at home and abroad are analyzed.The research progress of improving the performances of SiO_(2)/SiC interface in recent years is summarized.Finally,the advantages and disadvantages of several process methods of reducing the interface state density are analyzed,and the development direction of further improving the interface quality by combining these methods is pointed out.

关 键 词：SIC 界面态密度 沟道电子迁移率 晶面选择 氧化层制备工艺 氧化后退火(POA) 

分 类 号：TN305[电子电信—物理电子学]