基于表面势的增强型p-GaN HEMT器件模型  

Surface Potential Based E-mode p-GaN HEMT Device Model

作　　者：葛晨 李胜 张弛 刘斯扬 孙伟锋 GE Chen;LI Sheng;ZHANG Chi;LIU Si-yang;SUN Wei-feng(School of Microelectronic,Southeast University,Wuxi,Jiangsu 214000,China;School of Electronic Engineering,Southeast University,Nanjing,Jiangsu 210096,China)

机构地区：[1]东南大学微电子学院,江苏无锡214000 [2]东南大学电子科学与工程学院,江苏南京210096

出　　处：《电子学报》2022年第5期1227-1233,共7页Acta Electronica Sinica

基　　金：国家重点研发计划(No.2020YFF0218501);江苏省科技成果转化基金(No.BA2020027);东南大学至善学者(No.2238185478)。

摘　　要：为了满足功率电路及系统设计对p-GaN HEMT(High Electron Mobility Transistor)器件模型的需求,本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE(Simulation Program with Integrated Circuit Emphasis)模型.根据耗尽型GaN HEMT器件和增强型p-GaN HEMT器件结构的对比,推导出p-GaN栅结构电压解析公式.考虑到p-GaN栅掺杂效应和物理机理,推导出栅电容和栅电流解析公式.同时,与基于表面势的高电子迁移率晶体管高级SPICE模型内核相结合,建立完整的增强型p-GaN HEMT功率器件的SPICE模型.将所建立的SPICE模型与实测结果进行对比验证.结果表明,所建立的模型准确实现了包括转移特性、输出特性、栅电容以及栅电流在内的p-GaN HEMT器件的电学特性.模型仿真数据与实测数据拟合度误差均小于5%.本文所提出的增强型p-GaN HEMT器件模型在进行电路设计时具有重要的应用价值.To meet the requirements for the power circuit and system design for enhancement-mode p-GaN HEMT(High Electron Mobility Transistor)device SPICE(Simulation Program with Integrated Circuit Emphasis)models,a model of enhancement-mode p-GaN HEMT device based on the surface potential calculation method is proposed in the paper.According to the comparison between the structures of the depletion-mode GaN HEMT device and the enhancementmode p-GaN HEMT device,analytical formulas for the voltage of the p-GaN gate structure are derived.Considering the doping effect of p-GaN gate and physical mechanism,analytical formulas for the gate current and gate capacitance are derived.At the same time,combined with the ASM(Advanced SPICE Model)core,a complete SPICE model of enhancement-mode p-GaN HEMT power device is established.The established SPICE model is compared and verified with the measured results.The results show that the proposed model accurately realizes the electrical characteristics of p-GaN HEMT device including transfer characteristics,output characteristics,gate capacitance,and gate current.The simulation data of the model fits the measured data of the actual enhancement-mode p-GaN HEMT device well,and the fitting errors of the model simulation data and the measured data are less than 5%.The enhancement-mode p-GaN HEMT device model proposed in the paper,which is based on the perfect ASM-HEMT and considers the doping effect of p-GaN layer and physical mechanism of p-GaN gate structure,has important application value in circuit design.

关 键 词：增强型 高级Simulation Program with Integrated Circuit Emphasis模型 p-GaN栅 转移特性 输出特性 栅电容 栅电流 

分 类 号：TN389[电子电信—物理电子学]