基于专利信息的半导体光刻胶领域发展与现状分析  

Analysis of the Development Status of Semiconductor Photoresist Based on Patents

作　　者：曹燕[1] 李琳珊 毛一雷[1] 张瑞 CAO Yan;LI Linshan;MAO Yilei;ZHANG Rui(Institute of Scientific and Technical Information of Chin a,Beijing 100038,China)

机构地区：[1]中国科学技术信息研究所,北京100038

出　　处：《世界科技研究与发展》2022年第3期428-441,共14页World Sci-Tech R&D

基　　金：国家自然科学基金“基于开源情报的科技前沿多维度探测方法及模型研究”(72074201);中信所创新研究基金青年项目(QN2020-04,QN2021-05)。

摘　　要：以智慧芽专利数据库中收录的全球126个国家/地区的半导体光刻胶相关专利文献作为研究对象,从专利申请量、申请趋势、专利法律状态、地域分布、主要申请人和技术分布等方面,分析了近50年全球半导体光刻胶领域的发展现状,并利用该领域内排名前十的国外主要申请人的专利进行关键技术识别。研究发现:全球半导体光刻胶专利活动可分为四个阶段,中国专利申请变化趋势与全球变化趋势基本一致,但中国在此领域的发展较晚且专利申请总量低于美日韩等发达国家;美日韩三国在半导体光刻胶领域处于领先地位,其中日本掌握着该领域的核心技术并长期处于垄断地位,而我国与此相比还处于发展阶段;国外代表企业在半导体光刻胶领域的关键技术主要集中在光刻胶成分结构设计及其合成工艺设计与优化上。Based on semiconductor photoresist patents in 126 countries/regions collected by Patsnap database,the global patent application quantity,application trend,legal status,area distribution,main patent applicants and technique distribution are analyzed,and patents related to the semiconductor photoresist in the past 50 years are analyzed.Moreover,this paper recognizes the key technique of this area by analyzing the patents of TOP 10 foreign patent applicants.It is concluded that the global patent activity of semiconductor photoresist could be divided into four stages,and the changing trend of Chinese patent applications is basically the same as that of the whole world.However,the development of China in this field started relatively late and the total number of patent applications is lower than that of developed countries such as the United States,Japan and South Korea.The United States,Japan and South Korea occupy leading positions in the field of semiconductor photoresist,and Japan has mastered the technique in this field and has been in a monopoly position for a long time.China,comparatively,is still in the development stage.The key technique of representative foreign companies in semiconductor photoresist field is mainly focused on the design of photoresist composition and the design and optimization of synthesis process.

关 键 词：集成电路 半导体 光刻胶 光刻工艺 

分 类 号：G255.53[文化科学—图书馆学] TN405[电子电信—微电子学与固体电子学]