Au-Al共晶键合在MEMS器件封装中应用的研究  

Research on application of Au-Al eutectic bonding in MEMS device packaging

作　　者：肖斌[1] 邝云斌 虢晓双 侯占强[1,2] XIAO Bin;KUANG Yunbin;GUO Xiaoshuang;HOU Zhanqiang(School of Intelligent Science,National University of Defense Technology,Changsha 410073,China;Hunan MEMS Engineering Center,Changsha 410073,China)

机构地区：[1]国防科技大学智能科学学院,湖南长沙410073 [2]湖南省MEMS工程技术研究中心,湖南长沙410073

出　　处：《传感器与微系统》2022年第7期21-24,共4页Transducer and Microsystem Technologies

基　　金：装备预研重点基金资助项目(61409230704)。

摘　　要：针对微机电系统(MEMS)器件在实际应用中出现的真空封装可靠性低的问题,进行了Au-Al共晶键合实验研究。重点研究了键合金属层的厚度、键合温度和作为键合区域的密封圈的结构对键合样品性能的影响,同时借助3D超景深测量显微镜对Au-Al共晶键合样品界面的微观结构进行了分析。结果表明:当键合温度为300℃,Au层厚度为600 nm,Al层厚度为200 nm,采用宽度为50μm的密封圈,此时键合样品的综合性能最好,力学性能达到最佳。Aiming at low reliability of vacuum packaging of micro-electro-mechanical system(MEMS)devices in practical applications,an experimental study on Au-Al eutectic bonding is carried out.The focus is on the influence of the thickness of the bonding metal layer,the bonding temperature,and the structure of the sealing ring as the bonding area on the performance of the bonded sample.At the same time,microstructure of the Au-Al eutectic bonding sample interface is analyzed with the help of 3D ultra-depth-of-field measuring microscope.The results show that when the bonding temperature is 300℃,the thickness of the Au layer is 600 nm,the thickness of the Al layer is 200 nm,and the sealing ring with a width of 50μm is used,the overall performance of the bonded sample is the best,and the mechanical properties are the best.

关 键 词：微机电系统 真空封装 Au-Al共晶键合 柯肯达尔效应 键合强度 

分 类 号：TN305[电子电信—物理电子学]