SiC单晶材料的激光剥离技术研究进展  

Research Progress of Laser-assisted Spalling for SiC Single Crystal

作　　者：胡北辰 张志耀 张红梅 牛奔 HU Beichen;ZHANG Zhiyao;ZHANG Hongmei;NIU Ben(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《电子工艺技术》2022年第4期192-195,222,共5页Electronics Process Technology

摘　　要：SiC具备优异的物理特性,可显著提升微波射频、电力电子等器件的性能与能效,但高昂的衬底成本影响了SiC的广泛应用。除了长晶速度慢、良率低外,晶体加工也是其价格居高不下的重要原因。激光剥离技术结合激光垂直改质与可控晶体剥离,可实现低损耗、高效率、高质量的SiC晶体加工。介绍了SiC产业瓶颈、技术难点、激光剥离技术原理,并重点总结了激光剥离技术的研究进展。SiC has excellent physical characteristics,which has been proved to enhance the performance and efficiency of microwave,RF,power electronics and other devices.However,the high cost of SiC substrates has hindered its wide application.In addition to the slow growth rate and low yield during crystal growth,the wafering process is another important cause for the high cost of SiC material.By combining laser-induced vertical modification and controlled crystal spalling,laser-assisted spalling exhibits the ability of SiC wafering with low material loss,high efficiency and high quality.The pain points of SiC industry,the technical difficulties of SiC wafering and the fundamentals of laser-assisted spalling are briefly introduced,and the research progress of laser-assisted spalling technology is emphatically summarized.

关 键 词：SIC 晶体加工 激光垂直改质 可控晶体剥离 

分 类 号：TN249[电子电信—物理电子学] TN304.2