基于表面扫描法的SiP器件近场电磁辐射测试方法  

Near-field electromagnetic radiation test method of SiP device based on surface scanning method

作　　者：高成[1] 李维 梅亮[2] 林辰正 黄姣英[1] Gao Cheng;Li Wei;Mei Liang;Lin Chenzheng;Huang Jiaoying(School of Reliability and Systems Engineering,Beihang University,Beijing 100191,China;China Aerospace Science&Industry Corp Defense Technology R&T Center,Beijing 100854,China)

机构地区：[1]北京航空航天大学可靠性与系统工程学院,北京100191 [2]航天科工防御技术研究试验中心,北京100854

出　　处：《电子技术应用》2022年第7期54-59,共6页Application of Electronic Technique

摘　　要：在近场电磁辐射测试研究中,还没有一套完整的面向单个元器件的测试方法。针对此问题,基于表面扫描法对SiP器件的近场电磁辐射测试方法进行研究。第一,利用X光研究SiP器件内部结构并进行干扰源分析;第二,完成硬件、软件层搭建使器件进入工作状态;第三,搭建近场测试系统,对工作中的器件实施近场测试。在案例研究中,所用SiP器件内部封装外围器件和作为主要干扰源的处理器。近场测试结果显示,PCB上辐射主要集中在SiP器件周围,器件近场辐射集中在处理器芯片处。案例研究的结果说明这种测试方法可以有效测量SiP器件的近场电磁辐射,并对器件内干扰源进行分析。In the research of near-field electromagnetic radiation test,there is no complete set of test methods for individual components.Aiming at this problem,a near-field electromagnetic radiation test method for System in Package(SiP)devices is researched based on surface scanning method.Firstly,the internal structure of the SiP device is researched by X-ray and the source of interference is analyzed.Secondly,the hardware and software layer is built to make the device work.Thirdly,a near-field testing system is built to implement near-field test of DUT.In the case research,the SiP device used is encapsulated with peripherals and a processor which is the main interference source.The near-field test results show that the radiation on PCB is mainly concentrated around SiP device,and the near-field radiation of device is concentrated at processor chip.Case research results show that this kind of test method can effectively measure the SiP device of near field electromagnetic radiation,and analyze the interference sources inside the device.

关 键 词：系统级封装 电磁辐射 表面扫描法 近场扫描测试 

分 类 号：TN407[电子电信—微电子学与固体电子学]