一款深亚微米抗辐照芯片的设计与实现  

Design and Implementation of a Deep Submicron Irradiation Resistant Chip

作　　者：邹文英 高丽 谢雨蒙 周昕杰 郭刚[2] ZOU Wenying;GAO Li;XIE Yumeng;ZHOU Xinjie;GUO Gang(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China;Innovative Center of Radiation Hardening Applied Technology,China Institute of Atomic Energy,Beijing 102413,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072 [2]中国原子能科学研究院抗辐射应用技术创新中心,北京102413

出　　处：《电子与封装》2022年第7期34-37,共4页Electronics & Packaging

摘　　要：设计了一款适用于航空航天领域的深亚微米抗辐照四路串口收发电路,重点介绍了逻辑设计、后端设计和抗辐照加固设计。电路采用0.18μm CMOS工艺加工,使用工艺加固、单元加固及电路设计加固等多层次加固技术,有效地提高了电路的抗辐照能力。A deep submicron irradiation resistant quad serial transceiver circuit for aerospace applications is designed,focusing on logic design,back-end design,and irradiation resistant reinforcement design.The circuit is fabricated by 0.18μm CMOS process,and multilevel reinforcement techniques such as process reinforcement,cell reinforcement and circuit design reinforcement are used to effectively improve the irradiation resistance of the circuit.

关 键 词：收发器 深亚微米 抗辐照加固 

分 类 号：TN402[电子电信—微电子学与固体电子学]