N-IGBT正偏压温度不稳定性阈值电压综合退化模型  

N-IGBT positive bias temperature instability threshold voltage comprehensive degradation model

作　　者：孙豪 何怡刚[1] 袁伟博 王涛[1] Sun Hao;He Yigang;Yuan Weibo;Wang Tao(Schoolof Electrical Engineering and Automation,Hefei Universily of Technology,Hefei 230000,China)

机构地区：[1]合肥工业大学电气与自动化工程学院,合肥230009

出　　处：《仪器仪表学报》2022年第4期60-69,共10页Chinese Journal of Scientific Instrument

基　　金：装备预先研究重点项目(41402040301)资助。

摘　　要：N型绝缘栅双极型晶体管(N-IGBT)凭借其优良性能广泛应用于现代工业各个领域,预测特定条件下器件退化情况对提高N-IGBT可靠性具有重要意义。然而,随着N-IGBT制程的降低,因正偏压温度不稳定性(PBTI)造成的栅氧化层退化进一步加剧,退化宏观表现为器件剩余有用寿命(RUL)的降低和阈值电压的改变。基于经典Power Law模型和Arrhenius模型,以退化时间为切入点,提出了相对精度更高的三阶段Power Law-Arrhenius综合退化模型;通过加速退化实验模拟了正偏压温度不稳定性对N-IGBT的退化作用,并在退化后对反映功率器件剩余有用寿命的特征参数阈值电压进行测量;基于遗传优化算法和加速退化实验数据对综合退化模型参数进行优化拟合,确定了N-IGBT综合退化模型的一般数学表达形式,得出其精度在85%以上,并高于传统的Power Law模型精度。The N-type insulated gate bipolar transistor(N-IGBT) is widely used in various fields of modern industries due to its excellent performance. The prediction of the device degradations under specific conditions is of great significance for improving N-IGBT reliability. However, with the decrease of the N-IGBT process, the internal electric field intensity of the gate oxide is constantly increasing, and the degradation of the gate oxide caused by the positive bias temperature instability(PBTI) is further intensified, the degradation is macroscopically reflected in the reduction of device remaining useful life(RUL) and changes of the threshold voltage. Based on the classical Power-Law model and the Arrhenius model, this article proposes a three-stage Power Law-Arrhenius comprehensive degradation model with relatively higher accuracy using the common parameter degradation time as the starting point. The degradation effect of positive bias temperature instability on N-IGBT through accelerated degradation experiment. Then, the threshold voltage which reflects the life of the power device after degradation is measured. Based on the genetic optimization algorithm and accelerated degradation experimental data, the comprehensive degradation model parameters are fitted and optimized, the mathematical expression form of the comprehensive degradation model is determined with an its accuracy above 85%, which is higher than that of the traditional power law model.

关 键 词：N-IGBT PBTI 加速退化 阈值电压 综合退化模型 

分 类 号：TN386[电子电信—物理电子学] TH7[机械工程—仪器科学与技术]