基底偏压对Zr-B-O-N薄膜结构及性能的影响  

Effect of Substrate Bias on Structure and Properties of Zr-B-O-N Thin Films

作　　者：孟瑜 宋忠孝[2] 王小艳 钱旦 刘明霞[1] 李晓华 MENG Yu;SONG Zhongxiao;WANG Xiaoyan;QIAN Dan;LIU Mingxia;LI Xiaohua(Shaanxi Key Laboratory of Surface Engineering and Remanufacturing,Xi'an University,Xi'an 710065,China;State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049,China;CRRC Yongji Motor Co.,Ltd.,Yongji 044502,China)

机构地区：[1]西安文理学院陕西省表面工程与再制造重点实验室,陕西西安710065 [2]西安交通大学金属材料强度国家重点实验室,陕西西安710049 [3]中车永济电机有限公司,山西永济044502

出　　处：《中国材料进展》2022年第7期584-588,共5页Materials China

基　　金：陕西省自然科学基金项目(2020JQ-889,2018JQ5173,2021JM-512);陕西省教育厅科技项目(19JS056,19JK0739);西安市科技计划项目(2019KJWL24)。

摘　　要：二硼化锆(ZrB_(2))薄膜因具有高熔点、低电阻率等特点,在硅基器件Cu互连工艺中具有广阔的应用前景。然而,沉积态ZrB_(2)薄膜多呈现结晶态,其晶界会为Cu原子提供快速扩散通道,通过非金属元素(N或O)掺杂可以得到非晶结构的ZrB_(2)薄膜,以提高其扩散阻挡性能。采用反应磁控溅射技术,在不同基底偏压下在单晶Si(100)基底上沉积了Zr-B-O-N薄膜和Cu/Zr-B-O-N双层膜,分别利用原子力显微镜、X射线衍射仪、透射电子显微镜、扫描电子显微镜和四点探针仪等检测方法对薄膜的微观组织结构、电学和扩散阻挡性能进行表征分析。研究结果表明:沉积态Zr-B-O-N薄膜表面平整,粗糙度随基底偏压增加而增加,且薄膜均呈现非晶结构;当基底偏压为150 V时,10 nm厚的非晶Zr-B-O-N薄膜可以在700℃有效阻挡Cu原子扩散。因此,Zr-B-O-N薄膜是一种具有应用潜力的扩散阻挡层材料。Zirconium diboride(ZrB_(2))thin films possess high melting point and low resistivity,and has a wide application potential in Cu interconnection of silicon based devices.However,the deposited ZrB_(2) films usually show crystal structure,and its grain boundary provides a fast diffusion path for Cu atoms.Amorphous structure can be obtained by doping nonmetallic elements(N or O atoms)to improve its diffusion barrier performance.In this paper,Zr-B-O-N films were deposited on single crystal Si(100)substrates by reactive magnetron sputtering under different substrate bias voltages.The microstructure,electrical and diffusion barrier performance of the films were characterized by atomic force microscopy,X-ray diffraction,transmission electron microscopy,scanning electron microscopy and four point probe.The results show that the deposited Zr-B-O-N films are amorphous and have flat surface,the roughness increases with the increase of substrate bias voltage.When the substrate bias voltage is 150 V,the formed amorphous Zr-B-O-N film with a thickness of 10 nm can effectively block Cu atom diffusion at 700℃.Therefore,Zr-B-O-N film is a kind of potential diffusion barrier materials in the future.

关 键 词：Zr-B-O-N薄膜 磁控溅射 基底偏压 微观结构 扩散阻挡性能 

分 类 号：TG146.4[一般工业技术—材料科学与工程] TB383[金属学及工艺—金属材料]