HfO_(2)/SiO_(2)-Si型MOS器件陷阱电荷的γ辐照效应及退火效应  

γRadiation Effect and Annealing Effect on Trap Chargeof HfO_(2)/SiO_(2)-Si MOS Devices

作　　者：姜文翔 张修瑜 王佳良 崔博 孟宪福 于晓飞 李嫚 石建敏[1] 薛建明[2] 王新炜 JIANG Wenxiang;ZHANG Xiuyu;WANG Jialiang;CUI Bo;MENG Xianfu;YU Xiaofei;LI Man;SHI Jianmin;XUE Jianming;WANG Xinwei(Institute of Nuclear Physics and Chemistry,China Academy of Engineering Physics,Mianyang,Sichuan Province 621900,China;School of Physics,Peking University,Beijing 100871,China;School of Advanced Materials,Shenzhen Graduate School,Peking University,Shenzhen,Guangdong Province 518055,China)

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]北京大学物理学院,北京100871 [3]北京大学深圳研究生院新材料学院,广东深圳518055

出　　处：《现代应用物理》2022年第2期129-136,共8页Modern Applied Physics

基　　金：科学挑战计划资助项目(TZ-2018004)。

摘　　要：基于γ辐照和退火过程的电容电压和电导电压曲线,分析了氧化层陷阱电荷和界面陷阱电荷的变化规律,研究了HfO_(2)/SiO_(2)-Si结构MOS器件的^(60) Coγ辐照及退火效应。研究结果表明:当辐照剂量为500 Gy时,氧化层陷阱电荷以俘获负电荷为主;当辐照剂量大于500 Gy时,以俘获正电荷为主;当辐照剂量为500 Gy~100 kGy时,氧化层陷阱电荷随辐照剂量呈线性变化关系;当辐照剂量大于100 kGy时,呈亚线性变化关系;当辐照剂量为400 kGy时,在以天为量级的退火过程中,氧化层陷阱电荷随退火时间呈准线性变化关系;长期退火效应导致的氧化层陷阱电荷的减少量占辐照产生量的18%。Based on the capacitance-voltage and conductivity-voltage curves duringγirradiation and annealing process,the variation laws of the oxide trap charge and the interface trap charge are analyzed,and the irradiation and annealing effects on HfO_(2)/SiO_(2)-Si MOS devices irradiated by ^(60)Coγare studied.The results show that when the irradiation dose is 500 Gy,the trap charges of oxide layer mainly capture the negative charges,and while the irradiation dose is greater than 500 Gy,the positive charges are mainly captured.When the irradiation dose range from 500 Gy to 100 kGy,the trap charges of oxide layer change linearly with the irradiation dose.When the irradiation dose is 400 kGy,the oxide trap charges change quasi-linearly with the annealing time in the order of days;The reduction of oxide trap charge caused by long-term annealing effect accounts for 18% of the radiation production.

关 键 词：辐照效应 退火效应 MOS器件 氧化层陷阱电荷 界面陷阱电荷 

分 类 号：TN386[电子电信—物理电子学] TL99[核科学技术—核技术及应用]