栅结构缺陷对GaN HEMT器件性能影响的研究  

Study on the Influence of Gate Structure Defect on GaN HEMT Device Performance

作　　者：邵国键 陈正廉 林罡[1] 俞勇 沈杰 陈韬[1] 刘柱 SHAO Guojian;CHEN Zhenglian;LIN Gang;YU Yong;SHEN Jie;CHEN Tao;LIU Zhu(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2022年第3期234-238,共5页Research & Progress of SSE

摘　　要：GaN HEMT器件在使用中会发生突发烧毁的现象,这种失效与缺陷是正相关的,其中一种已知的缺陷为栅结构缺陷。通过直流特性测试、器件热分布、微区分析讨论了栅结构缺陷对器件性能的影响。势垒特性、击穿特性均无法表征出栅结构异常的器件,低漏压的转移特性也无明显差异,仅高漏压条件下的阈值电压能够表现出明显的变化,而且漏压越高阈值电压变化量越大。器件热分布图像能够定位出器件异常栅结构的位置,且高漏压比高电流更能够表征异常器件的缺陷位置。微区分析准确定位了异常栅结构缺陷的具体形貌和位置,为缺陷的工艺优化提供指导。Sudden burnout of GaN HEMT devices occurs during operation,and this failure is positively related to the defects.One of the known defects is the gate structure defect.In this paper,the influences of the device gate structure defect on the device performances are discussed through DC characteristic tests,thermal distributions and micro-analysis.The barrier and breakdown characteristics cannot characterize devices with abnormal gate structure,and the transfer characteristic with low drain voltage is also not significantly different. The threshold voltage can show a significant change under high drain voltage,and the higher the leakage voltageis,the greater the threshold voltage changes.The thermal distribution images of the device can locate the position of the abnormal gate structure,and the defect location can be better characterized by high leakage voltage than by high current.Microanalysis accurately locates the specific morphology and position of abnormal gate structure defects,and provides guidance for the optimization of manufacture process.

关 键 词：氮化镓高电子迁移率晶体管 栅结构缺陷 直流特性 转移特性 热分布 微区分析 

分 类 号：TN386[电子电信—物理电子学]