具有M形空穴阻挡层结构的AlGaN基深紫外激光二极管性能优化  

Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure

作　　者：张傲翔 王瑶[1] 王梦真 魏士钦 王芳[1,2] 刘玉怀 ZHANG Aoxiang;WANG Yao;WANG Mengzhen;WEI Shiqin;WANG Fang;LIU Yuhuai(National Center for International Joint Research of Electronic Materials and Systems,School of Electrical and Information Engineering,Zhengzhou University,Zhengzhou 450001,China;Zhengzhou Way Do Electronics Technology Co.Ltd.,Zhengzhou 450001,China;Industrial Technology Research Institute Co.Ltd.,Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]郑州大学电气与信息工程学院电子材料与系统国际联合研究中心,河南郑州450001 [2]郑州唯独电子科技有限公司,河南郑州450001 [3]郑州大学产业技术研究院有限公司,河南郑州450001

出　　处：《量子电子学报》2022年第4期583-590,共8页Chinese Journal of Quantum Electronics

基　　金：国家重点研发计划(2016YFE0118400);郑州市1125科技创新项目(ZZ2018-45);宁波市重大科技创新专项(2019B10129)。

摘　　要：为有效降低深紫外激光二极管(DUV-LD)在n型区的空穴泄露,优化其工作性能,提出了一种新颖的M形空穴阻挡层(HBL)结构。使用Crosslight软件对矩形、N形和M形三种空穴阻挡层结构进行仿真研究和对比,发现M形空穴阻挡层结构能够更有效地降低n型区的空穴泄露,增加量子阱内的辐射复合率,同时降低激光二极管的阈值电压与阈值电流,提升激光二极管的电光转换效率与输出功率,表明M形空穴阻挡层结构能够有效降低DUV-LD在n型区的空穴泄露并优化其工作性能。In order to reduce the hole leakage of deep ultraviolet laser diode(DUV-LD)in the n-type region effectively and optimize its performance,a novel M-shaped hole blocking layer(HBL)structure is proposed.By using Crosslight software,the rectangular,N-shaped and M-shaped HBL structures are simulated and compared.It is found that the M-shaped HBL structure can more effectively reduce the hole leakage in the n-type region,increase the radiation recombination rate in the quantum well,reduce the threshold voltage and threshold current of the laser diode,and improve the electro-optic conversion efficiency and output power of the laser diode.It is shown that the M-shaped HBL structure can effectively reduce the hole leakage of DUV-LD in the n-type region and optimize its performance.

关 键 词：激光技术 深紫外激光二极管 ALGAN M形空穴阻挡层 空穴泄露 

分 类 号：O472[理学—半导体物理]