基于MEMS工艺的硅基毫米波微同轴波导芯片  

Silicon-Based Millimeter Wave Micro Coaxial Waveguide Chip Based on MEMS Process

作　　者：董春晖 杨志[1] 申晓芳[1] 李宏军[1] DONG Chunhui;YANG Zhi;SHEN Xiaofang;LI Hongjun(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《现代信息科技》2022年第12期59-61,共3页Modern Information Technology

摘　　要：采用硅基MEMS工艺技术,开发了适用于毫米波频段的微波传输波导芯片。为了满足毫米波传输的需求,通过改进工艺流程,使制备出的线芯结构的厚度小于基片厚度,有利于对高次模的抑制。同时开发了水平转垂直的转向线芯结构,实现了信号的垂直过渡与传输。外屏蔽金属层分别制备在上、中、下三层晶圆的硅腔体内壁,最后经过晶圆级键合工艺形成闭合腔体。微波测试结果表明其具有毫米波传输性能。A microwave transmission waveguide chip suitable for millimeter wave band is developed by using silicon-based MEMS process.In order to meet the needs of millimeter wave transmission,the thickness of the prepared wire core structure is less than that of the substrate by improving the process flow,which is conducive to the suppression of high-order modes.At the same time,the horizontal to vertical steering core structure is developed to realize the vertical transition and transmission of signal.The outer shielding metal layer is prepared on the inner wall of the silicon cavity of the upper,middle and lower wafers respectively,and finally forms a closed cavity through the wafer level bonding process.Microwave test results show that it has millimeter wave transmission performance.

关 键 词：MEMS 微同轴 毫米波 波导 

分 类 号：TN811[电子电信—信息与通信工程]