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作 者:薛迎港 孟浩 王照文 赵文泽 刘保亭[1] 代秀红[1] XUE Yinggang;MENG Hao;WANG Zhaowen;ZHAO Wenze;LIU Baoting;DAI Xiuhong(College of Physics Science and Technology,Hebei University,Baoding 071002,China;College of Electronic and Information Engineering,Hebei University,Baoding 071002,China)
机构地区:[1]河北大学物理科学与技术学院,河北保定071002 [2]河北大学电子信息工程学院,河北保定071002
出 处:《河北大学学报(自然科学版)》2022年第4期364-369,共6页Journal of Hebei University(Natural Science Edition)
基 金:国家自然科学基金资助项目(11374086);河北省自然科学基金资助项目(E2014201188,A2018201168)。
摘 要:采用脉冲激光沉积法制备La_(0.67)Sr_(0.33)MnO_(3)(LSMO)薄膜,溶胶-凝胶法制备PbZr_(0.4)Ti_(0.6)O_(3)(PZT)薄膜,在SrTiO_(3)(STO)基片上制备了LSMO/PZT/LSMO异质结电容器.X线衍射(XRD)研究表明LSMO和PZT薄膜在STO基片上实现了外延生长.LSMO/PZT/LSMO电容器具有良好的铁电性能,在5 V测试电压下,剩余极化强度为26.9μC/cm^(2),矫顽电压为2.5 V,LSMO/PZT/LSMO电容器显示出了良好的抗疲劳性能.5 V电压下电容器的漏电流密度为7.4×10^(-6) A/cm^(2),在0~2.9 V为欧姆导电机制,2.9~5 V满足空间电荷限制电流(SCLC)导电机制.La_(0.67)Sr_(0.33)MnO_(3)(LSMO)/PbZr_(0.4)Ti_(0.6)O_(3)(PZT)/LSMO heterostructure was prepared on SrTiO_(3)(STO)substrate,in which LSMO films were prepared by pulsed laser deposition and PZT film was prepared by Sol-Gel method.The LSMO/PZT/LSMO heterostructure was characterized in terms of its structural and physical properties.X-ray diffraction(XRD)analysis established that both LSMO and PZT were grown epitaxially on STO substrate.The LSMO/PZT/LSMO capacitor possessed very good ferroelectric hysteresis property and its remnent polarization and coercive voltage of the LSMO/PZT/LSMO capacitor,measured at 5 V,were 26.9μC/cm^(2) and 2.5 V,respectively.The LSMO/PZT/LSMO capacitor exhibited very good fatigue resistant property.The leakage current density of the capacitor measured at 5 V was 7.4×10^(-6) A/cm^(2),and it met the ohmic conduction mechanism below 2.9 V,and space charge limited current(SCLC)conduction from 2.9 V to 5 V.
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