GaN HEMT小信号等效电路模型的关键参数提取  

Key parameter extraction of GaN HEMT small signal equivalent circuit model

作　　者：王旭 王军[1] WANG Xu;WANG Jun(School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《传感器与微系统》2022年第8期64-67,共4页Transducer and Microsystem Technologies

基　　金：四川省教育厅资助科研项目(18ZA0502)。

摘　　要：为了更好地表征GaN高电子迁移率晶体管(HEMT)物理特性,对GaN HEMT小信号等效电路建模及参数提取技术进行研究,提出了一种简单、直接的小信号模型参数提取方法。在传统16单元模型基础上,综合考虑GaN HEMT器件结构、本征特性,描述了一种更加完整的20单元等效电路模型。提出在无偏、Cold pich-off条件下获取寄生参数的方法,克服了传统的高珊正向偏压导致的栅极退化。基于双端口网络分析建立Y参数模型,提取本征元件参数,确保其结果在不同偏压下良好的平滑度,便于移植CAD商业工程应用中。在0~18 GHz频率范围内,ADS2014仿真工具的仿真数据与测试数据良好的一致性表明了所建模型及其参数提取技术的有效性。In order to better characterize the physical characteristics of GaN high-electron-mobility transistor(HEMT),the GaN-HEMT small-signal equivalent circuit modeling and parameter extraction technology are studied,and a simple and direct method for small-signal model parameter extraction is proposed.Based on the traditional 16-cell model,a more complete 20-cell equivalent circuit model is described by comprehensively considering the structure and intrinsic characteristics of the GaN HEMT device.A method to obtain parasitic parameters under unbiased and cold pich-off conditions is proposed,which overcomes the gate degradation caused by the traditional high-shan forward bias.The Y-parameter model is established based on the dual-port network analysis,and the intrinsic compone-nt parameters are extracted to ensure the smoothness of the results under different bias voltages,which is convenient for transplanting CAD commercial engineering applications.In the frequency range of 0~18 GHz,the good consistency between the simulation data of the ADS2014 simulation tool and the test data shows the effectiveness of the built model and its parameter extraction technology.

关 键 词：GAN高电子迁移率晶体管 小信号等效电路 参数提取 ADS2014仿真 

分 类 号：TN325.3[电子电信—物理电子学]