碲镉汞红外光电探测器局域场表征研究进展(特邀)  

Research progress on local field characterization of mercury cadmium telluride infrared photodetectors(invited)

作　　者：刘书宁 唐倩莹 李庆 Liu Shuning;Tang Qianying;Li Qing(Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China;Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]国科大杭州高等研究院物理与光电工程学院,浙江杭州310024 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《红外与激光工程》2022年第7期36-48,共13页Infrared and Laser Engineering

基　　金：国家重点研发计划(2020 YFB2009300);上海市科技计划(21 ZR1473400);杭州市科技发展计划(2020 ZDSJ901)。

摘　　要：碲镉汞材料(HgCdTe)是第三代红外探测系统中使用的重要探测材料,其发展水平能基本反映当前红外探测器最优性能指标。近年来,天文、遥感和民用设备对探测器性能提出了更高的要求,这对HgCdTe红外探测器的设计和制备提出了新的挑战。HgCdTe红外探测器更精细的设计和加工技术为提高HgCdTe红外探测器性能提供解决思路。抑制器件的有害局域场、调控器件的有益局域场可以实现器件性能进一步的突破。但是,如何对HgCdTe光电器件局域场进行表征与分析,澄清HgCdTe光电器件中局域场相关的噪声及暗电流起源,是推动器件性能突破需解决的重要关键科学与技术问题。文中将总结HgCdTe红外光电探测器局域场表征与分析的研究进展,为新一代HgCdTe红外光电探测器发展提供基础支撑。Mercury cadmium telluride(HgCdTe) material is an important detection material used in thirdgeneration infrared detection systems,and its development level can reflect the optimal performance indicators of current infrared detectors.In recent years,astronomical,remote sensing,and civil equipment have put forward higher requirements for detector performance,which has brought new challenges to the design and preparation of HgCdTe infrared detectors.The finer design and processing technology of HgCdTe infrared detectors provide solutions for improving the performance of HgCdTe infrared detectors.Suppressing the harmful local field of the device and regulating the beneficial local field of the device can achieve further breakthroughs in device performance.However,how to characterize and analyse the local field of HgCdTe optoelectronic devices and clarify the origin of dark current and related noise in HgCdTe optoelectronic devices have become key scientific and technical issues to be solved to promote device performance breakthroughs.This paper summarizes the research progress of local field characterization and analysis of HgCdTe infrared photodetectors and provides basic support for the development of a new generation of HgCdTe infrared photodetectors.

关 键 词：碲镉汞器件 微区光电流扫描技术 局域场 暗电流 

分 类 号：TN21[电子电信—物理电子学]