基于故障注入的NOR Flash单粒子效应模拟方法研究  

Research on single particle effect simulation of NOR Flash based on fault injection

作　　者：黄姣英[1] 何明瑞 袁伟 高成[1] 王乐群 Huang Jiaoying;He Mingrui;Yuan Wei;Gao Cheng;Wang Lequn(School of Reliability and Systems Engineering,Beihang University,Beijing 100191,China;The Fourth Military Representative Office of the Army Armament Department in Beijing,Beijing 100072,China)

机构地区：[1]北京航空航天大学可靠性与系统工程学院,北京100191 [2]陆军装备部驻北京地区第四军事代表室,北京100072

出　　处：《电子测量技术》2022年第13期65-70,共6页Electronic Measurement Technology

基　　金：国家国防科技工业局技术基础科研项目(JSZL2016601B007)资助。

摘　　要：针对目前大容量NOR Flash存储器单粒子效应模拟缺乏具体操作方法的问题,本文提出NOR Flash单粒子翻转、单粒子功能中断、单粒子闭锁3种单粒子效应对应软件故障注入方法,设计适用于大容量器件的板级测试系统并进行功能验证,通过故障注入方法开展单粒子效应模拟实验。NOR Flash存储器单粒子效应测试系统包括FPGA控制逻辑、Flash检测板和上位机软件三部分。结果表明,单粒子翻转、单粒子闭锁和单粒子功能中断3种单粒子效应的软件故障注入方法均通过NOR Flash存储器单粒子效应测试系统得到验证。本文的研究可以为相关单粒子效应模拟提供参考,为分析存储器单粒子效应对电子系统的可靠性影响打下基础。In view of the lack of specific operation methods of single particle effect simulation in large capacity NOR Flash memory,this paper proposes three methods of single particle effect software fault injection in NOR Flash memory:single particle flip,single particle function interrupt and single particle latching.The board level test system is designed for large capacity devices and its function is verified.The single particle effect simulation experiment is carried out by fault injection method.The single particle effect test system of NOR Flash memory consists of FPGA control logic,flash detection board and host computer software.Results indicate that single particle flip,single particle latching and single particle function interruption software fault injection methods are verified by single particle effect test system of NOR Flash memory.This paper can provide a reference for related single particle simulation and the electrical system reliability analysis for single particle effect.

关 键 词：NOR Flash 单粒子效应 故障注入 测试系统 模拟方法 

分 类 号：TN43[电子电信—微电子学与固体电子学]