SiC单晶生长初期表面台阶及微管特性  

Surface Steps and Micropipes Characteristics in Initial Stage of SiC Single Crystal Growth

作　　者：仲光磊 胡国杰 王鹤静 谢雪健 杨祥龙[1] 彭燕[1] 陈秀芳[1] 胡小波[1] 徐现刚[1] ZHONG Guanglei;HU Guojie;WANG Hejing;XIE Xuejian;YANG Xianglong;PENG Yan;CHEN Xiufang;HU Xiaobo;XU Xiangang(Shandong University,Institute of novel semiconductors,State Key Laboratory of Crystal Materials,Jinan 250100,China)

机构地区：[1]山东大学新一代半导体材料研究院晶体材料国家重点实验室,济南250100

出　　处：《硅酸盐学报》2022年第8期2239-2244,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金青年基金项目(52022052,51902182,62004118);山东省自然科学基金项目(ZR2019JQ01,ZR2019BEM011,ZR2019BEM030);山东省重点研发计划项目(2019JMRH0901,2019JMRH0201);山大基本业务项目(2019JCG010,2020GN080);山东大学“仲英青年学者”人才项目(彭燕)。

摘　　要：晶体生长初期成核阶段的籽晶表面变化对后续晶体生长质量具有重要影响。采用光学显微镜对SiC生长初期的表面和微管形貌进行观察。在8×10^(4)Pa、1800-2100℃生长条件下,籽晶表面出现了原子迁移产生的台阶。同时发现微管会严重干扰正常台阶流的运动,并且微管处会形成一个圆形凹坑。在2×10^(4)Pa、2150~2300℃生长条件下,发现籽晶表面中心已经形成了多个SiC晶核,籽晶边缘附近的部分微管已经产生明显应力区,且应力主要在紧贴微管并朝向边缘的区域,证明了台阶流是由中心向边缘移动的。此外,对加工后的衬底表面进行AFM观察,发现其表面同样存在取向不同的台阶,这可能与晶体生长初期的台阶形貌有关。The growth of crystal in the initial stage have an impact on the quality of crystal in the subsequent growth.In this paper,the surface and micropipes morphology of SiC in the initial stage of growth was investigated by optical microscopy.At 8×10^(4) Pa and 1800–2100℃,the growth step appears on the seed crystal surface due to the atomic migration.Also,the micropipes seriously disturbe the movement of normal step flow,and a circular pit occurs around the micropipes.And no polytype transformation occurs at the micropipes.At 2×10^(4) Pa and 2150–2300℃,multiple SiC nuclei are formed in the center of the seed crystal surface.Obvious stress regions appear near the crystal edge due to the existence of micropipes.The stress is mainly in the region close to the micropipes and towards the crystal edge,indicating that the step flow moves from the center to the edge.In addition,SiC substrate was also characterized by atomic force microscopy,indicating that atom steps with different orientations appear on the substrate surface,which may originate from the step morphology of the crystal grown in the initial stage.

关 键 词：微管 碳化硅 单晶 台阶流 晶体生长 

分 类 号：TB34[一般工业技术—材料科学与工程]