石墨烯对基于无铅焊料的低温Cu-Cu键合的影响  

Effect of Graphene on Low Temperature Cu-Cu Bonding Based on Lead-Free Solder

作　　者：周凯 尹翔 王炜 李柘霖 王旭 段竞峰 杨文华 Zhou Kai;Yin Xiang;Wang Wei;Li Zhelin;Wang Xu;Duan Jingfeng;Yang Wenhua(School of Microelectronics,Hefei University of Technology,Hefei 230009,China;School of Electronics and Information Engineering,Anhui University,Hefei 230601,China)

机构地区：[1]合肥工业大学微电子学院,合肥230009 [2]安徽大学电子信息工程学院,合肥230601

出　　处：《微纳电子技术》2022年第7期696-701,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61404042);国家大学生创新创业训练计划项目(202010359069)。

摘　　要：通过在铜薄膜表面逐次转移石墨烯(G),在铜薄膜和Sn-3.0 Ag-0.5 Cu(SAC)焊料间插入了中间层,利用低温热压键合技术实现高可靠性的Cu-Cu键合,研究了不同厚度的石墨烯作为中间层对键合的影响。在150℃下持续老化后,通过观察微观结构、测量剪切强度以及接触电阻,可知转移2次的石墨烯作为中间层可以有效抑制金属间化合物(IMC)的过度不规则生长。老化72 h后,Cu-2G-SAC键合界面处IMC层的厚度仅为1.01μm,且保持16.7 MPa的剪切强度,高于Cu-SAC键合结构的剪切强度。因此,在不同金属界面上逐次转移石墨烯可以控制界面反应和接触界面IMC过度不规则生长。An interlayer was inserted between the Cu film and the Sn-3.0 Ag-0.5 Cu(SAC)solder by transferring graphene(G)onto the surface of the Cu film successively.High reliability Cu-Cu bonding was achieved by low temperature thermo-compression bonding technology,and the effect of graphenes with different thicknesses as the interlayer on bonding was studied.After continuous aging at 150℃,by observing the microstructure,and measuring the shear strength and contact resistance,it is concluded that graphene transferred twice as an interlayer can effectively inhibit the immoderate irregular growth of intermetallic compounds(IMCs).After aging for 72 h,the thickness of the IMC layer at the bonding interface of Cu-2 G-SAC is only 1.01μm,and the shear strength remains 16.7 MPa,which is higher than that of the Cu-SAC bonding structure.Thus,successively transferred graphene at the interface between different metals can control the interfacial reaction and the immoderate irregular growth of IMCs at the contact interface.

关 键 词：石墨烯 低温键合 金属间化合物(IMC) 无铅焊料 老化 

分 类 号：TN305.93[电子电信—物理电子学]