具有表面超结的横向绝缘栅双极晶体管研究  

Study on a Lateral Insulated Gate Bipolar Transistor with Surface Superjunction

作　　者：周淼 倪晓东 何逸涛 陈辰 周锌[3,4] ZHOU Miao;NI Xiaodong;HE Yitao;CHEN Chen;ZHOU Xin(The 58th Research Institute of China Electronics Technology Group Corp.,Wuxi,Jiangsu 400060,P.R.China;Zhuzhou CRRC Times Semiconductor Co.,Ltd.,Zhuzhou,Hunan 412000,P.R.China;Power Integration Technology Laboratory,University of Electronic Science and Technology of China,Chengdu 610054,P.R.China;Guangdong Institute of Electronic and Information Engineering,University of Electronic Science and Technology of China,Dongguan,Guangdong523808,P.R.China)

机构地区：[1]中国电子科技集团公团第五十八研究所,江苏无锡214035 [2]株洲中车时代半导体有限公司,湖南株洲412000 [3]电子科技大学功率集成技术实验室,成都610054 [4]电子科技大学广东电子信息工程研究院,广东东莞523808

出　　处：《微电子学》2022年第3期454-458,共5页Microelectronics

基　　金：国家自然科学基金资助项目(62004034);广东省自然科学基金资助项目(2022A1515012264)。

摘　　要：提出了一种基于体硅的表面超结横向绝缘栅双极晶体管(SSJ LIGBT)。分析了工艺参数注入剂量和注入能量对器件性能的影响,基于耐压需求的考虑,设计并优化了SSJ LIGBT器件及其终端。对该SSJ LIGBT进行了击穿特性、输出特性和转移特性的测试。测试结果表明,该SSJ LIGBT的耐压达到693 V,比导通电阻仅为6.45Ω·mm~2。A surface superjunction lateral insulated gate bipolar transistor(SSJ LIGBT) based on bulk silicon was proposed. In order to improve the device performance, the effects of the parameters, injection dose and energy, were analyzed. The structure and the termination of SSJ LIGBT were designed and optimized due to the requirement of withstand voltage. The breakdown characteristics, output characteristics and transfer characteristics of the SSJ LIGBT were tested. The test results showed that the SSJ LIGBT had a voltage resistance of 693 V and a specific on-resistance of only 6.45 Ω·mm~2.

关 键 词：横向绝缘栅双极型晶体管 表面超结 终端设计 耐压 比导通电阻 

分 类 号：TN322.8[电子电信—物理电子学]