使用3C/4H-SiC异质外延薄膜制备石墨烯  

Graphene Grown by Using 3C/4H-SiC Hetero-epitaxial Films

作　　者：王翼 周平 赵志飞[1] 李赟[1] WANG Yi;ZHOU Ping;ZHAO Zhifei;LI Yun(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2022年第4期329-334,共6页Research & Progress of SSE

摘　　要：采用在4H-SiC衬底上生长的3C-SiC薄膜进行了石墨烯的制备。首先在不同的C/Si比条件下进行3C-SiC薄膜的生长,然后通过对这些3C-SiC薄膜进行热分解来制备石墨烯。对C/Si比为2.21时生长的3C-SiC进行热分解,成功得到了石墨烯,其拉曼光谱2D峰的半高宽为60cm^(-1),迁移率为1480 cm^(2)V^(-1)s^(-1),晶畴尺寸为1μm×1μm左右。由热分解前后样品拉曼光谱的变化可知,石墨烯是由3C-SiC薄膜热分解得到的,与4H-SiC衬底无关,因此通过控制3C-SiC外延层的厚度即可实现对石墨烯厚度的控制。Graphene on 3C-SiC grown on 4H-SiC substrate was researched in this paper.Different C/Si ratios were used to grow 3C-SiC films on 4H-SiC substrates,then the thermal decomposition of different 3C-SiC films was performed to form graphene.Graphene is successfully obtained by the thermal decomposition of 3C-SiC films grown at the condition of C/Si=2.21 with a 2D peak FWHM of Raman spectrum about 60cm^(-1).The carrier mobility and domain size of graphene are1480 cm^(2)V^(-1)s^(-1) and 1μm×1μm respectively.The change of Raman spectrum before and after thermal decomposition shows that the graphene was composed of carbon produced by the decomposition of 3C-SiC film rather than 4H-SiC substrate.Therefore,the thickness of graphene can be controlled by controlling the thickness of 3C-SiC epitaxial layer.

关 键 词：3C-SIC 4H-SIC 石墨烯 C/Si比 热分解 

分 类 号：TN04[电子电信—物理电子学]