大尺寸Si基GaN HEMT外延薄膜的生长  

Growth of Large Size Si-Based GaN HEMT Epitaxial Films

作　　者：鲁德 戴一航 梁利彦 周昆楠 LU De;DAI Yihang;LIANG Liyan;ZHOU Kunnan(School of Microelectronics,Hefei University of Technology,Hefei 230009,China)

机构地区：[1]合肥工业大学微电子学院,安徽合肥230009

出　　处：《现代信息科技》2022年第16期58-61,共4页Modern Information Technology

摘　　要：通过金属有机物化学气相沉积(MOCVD)法,在6英寸硅(111)衬底上生长了出制作高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)的无裂纹、高均匀性且翘曲度可控的GaN HEMT外延薄膜。通过引入双层AlN/Al_(0.3)Ga_(0.7)N超晶格和AlN/GaN超晶格作为Al_(x)Ga_(1-x)N应力控制层,解决了硅基GaN HEMT外延的裂纹和翘曲控制问题,且二维电子气(2DEG)浓度可达8.9×10^(12) cm^(-2),迁移率高达1980 cm^(2)/(V∙s)。器件的I-V曲线表明当漏电流为1μA/mm^(2),击穿电压大于800 V,具备较高的耐压和不漏电的特性。GaN High Electron Mobility Transistor(HEMT)epitaxial films with no crack,high uniformity and controllable bowing have been grown on 6 inch Si(111)substrates through Metal-Organic Chemical Vapor Deposition(MOCVD).By introducing double layers AlN/Al_(0.3)Ga_(0.7)N superlattice and AlN/GaN superlattice as the Al_(x)Ga_(1-x)N stress control layers,the cracks and warping control issues of Si-based GaN HEMT epitaxy are solved.The concentration of 2DEG could up to 8.9×10^(12) cm^(-2) and the mobility is up to 1980 cm^(2)/(V∙s).The(I-V)curves of the device show that when the leakage current is 1μA/mm^(2),the breakdown voltage is greater than 800 V,which has a higher voltage resistance and non-leakage characteristics.

关 键 词：ALGAN/GAN异质结 高电子迁移率晶体管 二维电子气 应力控制层 外延生长 

分 类 号：O484.1[理学—固体物理]