γ射线辐照柔性基底石墨烯霍尔传感器的总剂量效应  

Total Dose Effects of Flexible Graphene-Based Hall Sensors Irradiated byγ-Ray

作　　者：范林杰 毕津顺[1,2] 习凯 赵碧瑶 徐彦楠 季兰龙 FAN Linjie;BI Jinshun;XI Kai;ZHAO Biyao;XU Yannan;JI Lanlong(Key Laboratory of Microelectronics Devices&Integrated Technology,IMECAS,Beijing 100029,China;The School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学微电子学院,北京100049

出　　处：《现代应用物理》2022年第3期164-169,共6页Modern Applied Physics

基　　金：国家自然科学基金资助项目(616340084,61821091,61888102)。

摘　　要：开展了^(60)Coγ射线辐照柔性基底石墨烯霍尔传感器的总剂量效应实验研究,测量并分析了在γ射线辐照至1 Mrad前后柔性基底石墨烯霍尔传感器的电学性能。γ射线辐照后,传感器的霍尔电压、线性度、失调电压和电流相关灵敏度均略有降低,电流相关灵敏度下降了约8%。主要原因是辐照后传感器中引入了少量的杂质和缺陷,导致器件的均一性和对称性略有变化。分析了电离辐射与柔性基底石墨烯的霍尔传感器的相互作用,可为该种类传感器在空间或其他辐射敏感环境中的应用提供数据基础。The total ionizing dose(TID)effects of ^(60)Coγ-ray irradiation on the flexible graphene-based Hall sensors are evaluated experimentally.The basic electrical parameters of the sensors are measured and analyzed before and afterγ-ray irradiation up to 1 Mrad.Afterγ-ray irradiation,the Hall voltage,linearity,offset voltage,and current-related sensitivity of the sensor decreased slightly,and the current-related sensitivity decreased by 8%.The main reason is that a small amount of impurities and defects are introduced into the sensor,resulting in slight changes in the uniformity and symmetry of the device after ^(60)Coγ-ray irradiation.The interaction between ionizing radiation and the flexible graphene-based Hall sensors is analyzed,which provides an experimental data basis for the application of such sensors in space or other radiation-sensitive environments.

关 键 词：柔性 总剂量效应 单层石墨烯 霍尔传感器 Γ射线辐照 

分 类 号：O47[理学—半导体物理] TL99[理学—物理]