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作 者:陈浩 周海芳[1] 赖云锋[1,2] CHEN Hao;ZHOU Haifang;LAI Yunfeng(College of Physics and Information Engineering,Fuzhou University,Fuzhou,Fujian 350108,China;Fujian Science and Technology Innovation Laboratory for Optoelectronic Information,Fuzhou,Fujian 350108,China)
机构地区:[1]福州大学物理与信息工程学院,福建福州350108 [2]中国福建光电信息科学与技术创新实验室,福建福州350108
出 处:《福州大学学报(自然科学版)》2022年第5期621-626,共6页Journal of Fuzhou University(Natural Science Edition)
基 金:福建省自然科学基金资助项目(2019J01218);福建光电信息科学与技术创新实验室资助项目(2021ZR145)。
摘 要:采用磁控溅射和金属剥离工艺制备结构为P-Si/HfO_(2)/Ti和P-Si/HfO_(2)/Al_(2)O_(3)/Ti的阻变存储器,两器件均表现出双极性电阻转变特性.插入的Al_(2)O_(3)层使得高阻态导电机制从空间电荷限制电流导电向肖特基发射控制导电转变,器件高低阻态阻值比从约61倍提高到约2.15×10^(8)倍.通过限制set电流的方式实现多值存储,器件的4个阻态都能够非常稳定地在85℃高温下保持10^(4) s,有利于多值存储的实际应用.The resistive random-access memories with P-Si/HfO_(2)/Ti and P-Si/HfO_(2)/Al_(2)O_(3)/Ti structure were fabricated by magnetron sputtering and metal lift-off technology.The devices show bipolar resistive switching characteristics.The inserted Al_(2)O_(3)layer makes the high resistance state conduction be governed by a Schottky emission mechanism instead of a space charge limited current conduction mechanism,and the on/off ratio of the device increases from 61 to 2.15×10^(8).The multi-level storage is realized by change compliance current during set process.Four resistance states can be well retained for 10^(4) s at 85℃,which favors the practical application of multi-level storage.
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