离子束刻蚀改善膜厚均匀性的研究(特邀)  

Study of Ion Beam Etching to Improve Film Thickness Uniformity(Invited)

作　　者：付秀华[1,2] 王一博 潘永刚[2] 何云鹏 任海峰 FU Xiuhua;WANG Yibo;PAN Yonggang;HE Yunpeng;REN Haifeng(College of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 130022,China;Zhongshan Research Institute,Changchun University of Science and Technology,Zhongshan,Guangdong 528436,China;Guang Chi Technology(Shanghai)Co.,Ltd.,Shanghai 200444,China)

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]长春理工大学中山研究院,广东中山528436 [3]光驰科技(上海)有限公司,上海200444

出　　处：《光子学报》2022年第9期51-62,共12页Acta Photonica Sinica

基　　金：国家自然科学基金(No.11973040);国家重点研发计划(No.2017YFE0102900);吉林省重大科技攻关专项(No.20190302095GX)。

摘　　要：为了提高光学透镜表面的膜厚均匀性,用离子束刻蚀原理修正膜厚均匀性,用法拉第探针测试不同参数离子源的离子束密度,并研究不同离子束密度对Ti_(3)O_(5)膜层均匀性的影响。采用电子束与离子辅助沉积技术在未安装修正挡板的三级公自转行星盘真空镀膜机进行实验,对测试结果用Optilayer进行膜厚拟合,并用Zygo干涉仪测量粗糙度,分析离子束刻蚀对透镜表面形貌的影响。结果表明通过离子束的刻蚀,可见光波段Ti_(3)O_(5)单层膜的均匀性为0.36%,粗糙度由0.036 nm变为0.037 nm。Optical lenses are commonly used in security,optical instruments,digital camera lenses,etc.,and the spherical surface of the lens has a large difference in film thickness due to the large curvature of the projection at its centre and the different angles of incidence between the lens apex and edge positions.For large spherical optics,film thickness uniformity can be corrected in two ways:1)by optimising simple or planetary rotation fixtures;2)by installing fixed or moving correction baffles to improve film thickness uniformity.Correction baffles are used to correct the film thickness uniformity by selectively blocking the faster deposition rates on the optical element.Due to the small size of small spherical optical elements,the correction baffle is not able to improve the film thickness uniformity very well.In this paper,the principle of ion beam etching is applied to correct the film thickness uniformity by using electron beam and ion assisted deposition techniques in a three-stage metric rotating planetary disk vacuum coater without correction baffles.Two etching methods are used to improve the film thickness uniformity,the first method is deposition moment etching,where an ion beam is used to bombard the film material molecules while the vapour phase deposition coating is being applied.Variables were controlled to investigate the effect of different ion source currents and different ion source voltages on the film thickness uniformity.At constant ion source voltage values,the film uniformity of Ti_(3)O_(5)first decreases and then increases as the ion source current increases.At ion source voltage values of 1500 V,the ion source current increases,the BC value increases from 1300 mA to 1400 mA,and the ion beam density increases from 63.6μA/cm^(2) to 67.1μA/cm^(2) and its uniformity increases from 1.26%to 0.53%.The uniformity of the Ti_(3)O_(5)film layer increased with increasing ion source voltage at constant ion source current values.Comparative analysis revealed that changing the ion source current value ha

关 键 词：光学薄膜 膜厚均匀性 离子束刻蚀 三级公自转行星系统 光学透镜 

分 类 号：O484[理学—固体物理]