电子束光刻“自主可控”EDA软件HNU-EBL  

An“Autonomously Controlled”Electronic Design Automation Software HNU-EBL for Electron Beam Lithography

作　　者：姚文泽 徐宏成 赵浩杰 刘薇 侯程阳 陈艺勤 段辉高 刘杰[1] YAO Wenze;XU Hongcheng;ZHAO Haojie;LIU Wei;HOU Chengyang;CHEN Yiqin;DUAN Huigao;LIU Jie(College of Electrical and Information Engineering,Hunan University,Changsha 410082,China;College of Mechanical and Vehicle Engineering,Hunan University,Changsha 410082,China)

机构地区：[1]湖南大学电气与信息工程学院,湖南长沙410082 [2]湖南大学机械与运载工程学院,湖南长沙410082

出　　处：《湖南大学学报（自然科学版）》2022年第10期183-191,共9页Journal of Hunan University:Natural Sciences

基　　金：国家自然科学基金资助项目(61804049)。

摘　　要：为模拟和优化电子束光刻(Electron Beam Lithography,EBL)工艺过程,提高电子束光刻版图加工质量,依托湖南大学(Hunan University,HNU)开发了一套电子束光刻的“自主可控”国产电子设计自动化(Electronic Design Automation,EDA)软件HNU-EBL.该软件实现了以下主要功能:1)基于Monte Carlo方法计算电子束在光刻胶和衬底中的散射过程与运动轨迹;2)基于多高斯加指数函数模型计算拟合出电子束散射的点扩散函数;3)基于GDSII光刻版图文件矩阵化,进行邻近效应、雾效应等校正计算,优化电子束曝光剂量;4)基于卷积计算,计算出给定曝光剂量下的能量沉积密度,并计算出边缘放置误差等光刻加工质量关键指标.基于该软件,通过异或门(Exclusive OR,XOR)集成电路的光刻版图算例,计算在聚甲基丙烯酸甲酯(Polymethyl Methacrylate,PMMA)光刻胶和硅衬底中10 kV电子束的光刻工艺过程.通过对比电子束邻近效应校正前后的显影版图,验证了该软件的有效性.在完全相同的计算硬件和算例条件下,与主流同类进口EDA软件进行了对比,证实了在同等精度下,本软件具有更高的计算效率.已建立http://www.ebeam.com.cn网站,将HNU-EBL软件免费授权给EBL用户使用.In order to simulate and optimize the Electron Beam Lithography(EBL)process,and to improve the manufacturing quality of EBL layout,our team in Hunan University(HNU)developed a set of Electronic Design Automation(EDA)software toolkit named“HNU-EBL”.In this software,the following functionalities have been implemented:1)Calculation of the scattering process and trajectory of the electron beam in the resist and substrate based on Monte Carlo method;2)Calculation and fitting of the point spread function of electron beam scattering based on the multi-Gaussian plus exponential function models;3)Correction of the proximity and fogging effects and optimization of the incident electron dose distribution based on the GDSII lithography layout;4)Calculation of the energy deposition density under a given incident electron dose distribution based on convolution,and evaluation of the key lithography pattern fidelity metrics such as edge placement error.Using an Exclusive OR(XOR)integrated circuit layout as the lithography target pattern,the EBL process of a 10 kV electron beam in Polymethyl Methacrylate(PMMA)resist and silicon substrate layers is calculated.The functionalities and validity of the HNU-EBL is demonstrated by comparing the developed layout patterns with and without the proximity effect correction.Using exactly the same computing hardware and calculation settings,it is shown that the proposed HNU-EBL EDA software’s efficiency is better than some of the imported mainstream EBL EDA software.The website http://www.ebeam.com.cn has been established,and the HNU-EBL software is licensed to EBL users for free.

关 键 词：电子束光刻 计算光刻 Monte Carlo方法 邻近效应校正 EDA软件 

分 类 号：TP319[自动化与计算机技术—计算机软件与理论]