SiC材料发光性能表征综述  

Characterizing luminescent properties of SiC materials

作　　者：蒋文丽 仇猛淋 廖斌[1] 英敏菊 JIANG Wenli;QIU Menglin;LIAO Bin;YING Minju(College of Nuclear Science and Technolgy Beijing Normal University,100875,Beijing,China)

机构地区：[1]北京师范大学核科学与技术学院,北京100875

出　　处：《北京师范大学学报（自然科学版）》2022年第5期796-800,共5页Journal of Beijing Normal University(Natural Science)

基　　金：国家自然科学基金资助项目(11905010)。

摘　　要：本文从SiC材料发光性能表征方法出发,介绍了光致发光、阴极荧光和离子激发发光三种光学测量方法.不同发光表征技术适用研究材料不同的品质特征,光致发光是一种无损检测,阴极荧光对SiC外延层的位错缺陷具有更好的测量效果,离子激发发光可以观测缺陷发光的原位信息.发光变化与材料中的缺陷中心相关,因而光学测量可以很好地反映材料内部特征.通过不同光学测量方法研究SiC材料的发光性能,为更好地拓展SiC发光应用奠定了重要基础.In this paper,there are three optical measurement methods,photoluminescence,cathodoluminescence and ion-excited luminescence,are introduced based on the characterization methods of luminescence properties of SiC materials. Different luminescence characterization techniques are applicable for studying different quality characteristics, among which photoluminescence is a non-destructive test, cathodoluminescence has better measurement efficiency on dislocation defects of SiC epitaxial layer,ion excitation luminescence can detect the in-situ information of defect luminescence;the change of luminescence is related to the defect center in the material, so optical measurement can well reflect the interior features of the material. The luminescence properties of SiC materials were studied by different optical measurement methods,which laid an important foundation for better expanding the application of SiC luminescence.

关 键 词：碳化硅 掺杂 光学特性 发光 测量 

分 类 号：O472.3[理学—半导体物理]