铌在单晶硅扩散中的行为实验分析  

Analysis of Behavior of Niobium Diffusion in Monocrystalline Silicon

作　　者：姚峰英[1] 吴佳宏 胡睿 YAO Fengying;WU Jiahong;HU Rui(Shanghai Integrated Circuit R&D Center,Shanghai 201203,China)

机构地区：[1]上海集成电路研发中心,上海201203

出　　处：《集成电路应用》2022年第9期22-23,共2页Application of IC

基　　金：国家科技重大专题课题(2011ZX02702_004)。

摘　　要：阐述在某些新型器件的制备过程中需要使用金属铌作为特殊材料进行微细加工工艺,因此需要评估如何控制研发线上的铌浓度,实验估计铌从单晶硅片背面扩散到正面的时间,以及扩散系数。This paper describes that metal niobium needs to be used as a special material for micro machining in the manufacturing process of some new devices,so it is necessary to evaluate how to control the niobium concentration on the R&D line,and experimentally estimate the time of niobium diffusion from the back to the front of single crystal silicon wafer,as well as the diffusion coefficient.

关 键 词：集成电路制造 微细加工工艺 扩散系数 金属铌 

分 类 号：TN405[电子电信—微电子学与固体电子学]