碳化硅探测器的时间响应研究  

Investigation of temporal response characteristics in silicon carbide detector

作　　者：刘林月[1] 张建福[1] 李辉[1] 欧阳晓平[1] LIU Linyue;ZHANG Jianfu;LI Hui;OUYANG Xiaoping(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi′an 710024,China)

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,陕西西安710024

出　　处：《哈尔滨工程大学学报》2022年第11期1547-1552,共6页Journal of Harbin Engineering University

基　　金：国家自然科学基金项目(11922507,12050005).

摘　　要：碳化硅探测器是近年来新兴的半导体探测器,具有高电荷收集效率和强抗辐照特性,被广泛用于中子和带电粒子探测。本文针对电流型碳化硅探测器的时间响应特性开展研究,利用W.C.狄钦松模型理论计算和可等效δ脉冲的超快射线束响应实验分别研究了碳化硅探测器的时间特性,理论和实验结果较为一致;研究发现碳化硅探测器的具有超快时间响应特性,上升时间和响应半高宽小于2 ns;研究了碳化硅探测器时间响应的尺寸效应,获得了探测器时间响应下降时间与RC时间参数关系的经验公式。本文研究结果可为碳化硅探测器的设计、脉冲射线探测应用等提供参考。Silicon carbide detector is a kind of new semiconductor detector emerging in recent years,with high effi-ciency of charge collection and strong radiation resistance,becoming an ideal choice for the detection of neutron and charged particles.Temporal response characteristics of the current mode silicon carbide detector are investiga-ted in this paper.The theoretical calculation of the WC Dickinson model and the experiment of ultrafast beam response with equivalentδpulse are used to investigate temporal response characteristics of silicon carbide detector,obtaining consistent theoretical calculation and experiment results.The findings revealed that the silicon carbide detector has an ultrafast time response,with a rising time and response full width at half maximum of less than 2 ns.The sensitive size effect of the time response of the silicon carbide detector is studied,deriving the empirical formula of relationship between the falling time and RC time parameter of the detector.The study can provide a reference for the design of silicon carbide detectors and their application in pulsed ray detection.

关 键 词：碳化硅 半导体探测器 时间响应 宽禁带半导体 纳秒级 电流型探测器 

分 类 号：TL81[核科学技术—核技术及应用]