基于AlN的体声波滤波器材料、器件与应用研究进展  

Research Progress of AlN-Based Filters:Materials,Devices and Applications

作　　者：欧阳佩东 衣新燕 罗添友 王文樑[1] 李国强[1,2] OUYANG Peidong;YI Xinyan;LUO Tianyou;WANG Wenliang;LI Guoqiang(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China;Guangzhou Aifo Light Communication Technology Co.,Ltd.,Guangzhou 510700,China)

机构地区：[1]华南理工大学材料科学与工程学院,广州510641 [2]广州市艾佛光通科技有限公司,广州510700

出　　处：《人工晶体学报》2022年第9期1691-1702,共12页Journal of Synthetic Crystals

基　　金：广东省重点领域研发计划(2019B010129001)。

摘　　要：在5G通信时代,体声波(BAW)滤波器件成为实现高性能射频(RF)滤波的有效解决方案。在当前BAW器件发展最成熟的薄膜体声波谐振器(FBAR)技术和专利被少数几家公司持有的大环境下,对压电薄膜生长、器件的制备工艺等方面进行突破,形成独有的BAW器件技术路线显得尤为重要。本文综述了AlN薄膜的生长、AlN材料在BAW滤波器件的发展、基于AlN的BAW器件的制备及其应用。在国内研究者的努力下,基于单晶AlN的体声波谐振器(SABAR)器件,通过在材料生长方法及制备工艺上的独立自主创新,不仅使BAW滤波器件的性能得到了进一步提升,也给受到国外掣肘的国内射频滤波行业带来了一条摆脱国外“卡脖子”问题的新路线。In the era of 5G communication,bulk acoustic wave(BAW)filters have become an effective solution to achieve high-performance radio frequency(RF)filtering.In the current environment where film bulk acoustic resonator(FBAR)technology(the most mature BAW technology)and patents are held by a few companies,it is essential to make breakthroughs in piezoelectric film growth and device preparation,to form a unique BAW device technology route.This paper reviews the AlN thin film growth,the development of AlN in BAW filter devices,and the preparation and application of AlN-based BAW devices.With the efforts of domestic researchers,the single-crystalline AlN bulk acoustic resonator(SABAR)device has further improved the performance of BAW devices through independent innovation in the material growth method and preparation process.Moreover,it also brought a new route to eliminate the“neck sticking”problem to the RF filter industry constrained by foreign countries.

关 键 词：ALN薄膜 体声波滤波器 材料生长 设备制造 单晶AlN的体声波谐振器 

分 类 号：O484[理学—固体物理] TN713[理学—物理]