高温高压与CVD金刚石单晶衬底质量对比研究  

Comparative Study on the Quality of HTHP and CVD Single Crystal Diamond Substrates

作　　者：杨旖秋 韩晓桐 胡秀飞 李斌[1,2] 彭燕 王希玮[1,2] 胡小波 徐现刚[1,2] 王笃福[3] 刘长江 冯志红 YANG Yiqiu;HAN Xiaotong;HU Xiufei;LI Bin;PENG Yan;WANG Xiwei;HU Xiaobo;XU Xiangang;WANG Dufu;LIU Changjiang;FENG Zhihong(Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Jinan Diamond Technology Co.,Ltd.,Jinan 250100,China;National Key Laboratory of Application Specific Integrated Circuit,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]山东大学新一代半导体材料研究院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100 [3]济南金刚石科技有限公司,济南250100 [4]专用集成电路国家级重点实验室,石家庄050051 [5]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《人工晶体学报》2022年第9期1777-1784,共8页Journal of Synthetic Crystals

基　　金：山东省重大科技创新工程项目(2019JZZY010210);晶体材料国家重点实验室自主课题;国防科技重点实验室基金项目;山东省重大科技创新工程项目(2022CXGC010103)。

摘　　要：本文通过高分辨X射线衍射(HRXRD)、激光拉曼光谱(Raman)、晶格畸变检测等测试分析方法对多组高温高压(HTHP)Ⅰb、HTHPⅡa和化学气相沉积(CVD)型(100)面金刚石单晶样品进行对比研究。HRXRD和Raman的检测结果均表明HTHPⅡa型金刚石单晶的结晶质量接近天然金刚石,其XRD摇摆曲线半峰全宽和Raman半峰全宽分别为0.015°~0.018°和1.45~1.85 cm^(-1)。晶格畸变检测仪的检测结果表明,HTHPⅡa型金刚石单晶的应力分布主要有两种:一种几乎无明显应力分布,另一种沿<110>方向呈对称的放射状分布,其他区域无晶格畸变。HTHPⅠb和CVD型金刚石单晶应力分布均相对分散,晶格畸变复杂,与其HRXRD和Raman的检测结果相符。进一步利用等离子体刻蚀法对三种类型金刚石单晶(100)面位错缺陷进行对比分析,结果表明,HTHPⅡa型金刚石位错密度为三者中最低,仅为1×10^(3) cm^(-2)。本研究为制备高质量大尺寸CVD金刚石单晶的衬底选择提供了实验依据。The comparative study of high temperature and high pressure(HTHP)and chemical vapor deposition(CVD)single crystal diamonds was carried out.HTHPⅠb,HTHPⅡa,and CVD(100)single crystal diamonds were investigated by HRXRD,Raman and lattice distortion detector.The results of HRXRD and Raman demonstrate that the crystal quality of HTHPⅡa single crystal diamond is close to that of natural diamond.The full width at half maximum of rocking curve and Raman are respectively 0.015°to 0.018°and 1.45 cm^(-1) to 1.85 cm^(-1).The optical birefringence images measured by lattice distortion detector show that there are two kinds of stress-induced birefringence distribution in HTHPⅡa single crystal diamond,one is not obvious,the other is symmetrically radiated along the direction of<110>,and there is no lattice distortion in other regions.The strain structures of HTHPⅠb and CVD(100)single crystal diamond are relatively dispersed with complex lattice distortion.Furthermore,the defects of(100)plane of three types of single crystal diamond were analyzed by plasma etching method.The results show that the dislocation density of HTHPⅡa diamond is the lowest among the three types,which is only 1×10^(3) cm^(-2).The research work provides experiment support for selecting the substrate to prepare high-quality and large-size CVD single crystal diamond.

关 键 词：HTHPⅡa金刚石 HTHPⅠb金刚石 CVD金刚石 结晶质量 应力 等离子体刻蚀 位错密度 

分 类 号：P619.241[天文地球—矿床学]