忆阻器辐照效应研究现状及发展趋势  

Research status and development trends of irradiation effects on memristor

作　　者：王宇翔 汤戈 肖尧 赵欣雨 冯鹏[2] 胡伟 WANG Yuxiang;TANG Ge;XIAO Yao;ZHAO Xinyu;FENG Peng;HU Wei(College of Nuclear Technology and Automation Engineering,Chengdu University of Technology,Chengdu 610059,China;College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China)

机构地区：[1]成都理工大学核技术与自动化工程学院,成都610059 [2]重庆大学光电工程学院,重庆400044

出　　处：《核技术》2022年第11期1-12,共12页Nuclear Techniques

基　　金：国家自然科学基金(No.12205028);四川省自然科学基金项目(No.2022NSFSC1235)资助。

摘　　要：记忆电阻器(简称忆阻器)作为新型非易失性存储器和人工神经突触器件的有力候选者,在航空航天、火星探测等空间科学与应用领域有着巨大的发展前景。忆阻器的大规模应用,对于其抗辐照性能有异常严苛的要求。为了提高忆阻器的抗辐照能力,需要探究其辐照效应机理,发展一套有效的抗辐照工艺技术。本文在深入调研国内外研究现状的基础上,综述了忆阻器辐照效应的研究现状和趋势,重点针对过渡金属氧化物材料体系的忆阻器辐照效应,提出了现在亟须研究的科学问题和关键技术,从而为忆阻器抗辐照加固与空间应用提供一定的思路。As a strong candidate for the new type of non-volatile memories and artificial synaptic devices,memristor has a huge development prospect in aerospace,Mars exploration and other space science and application fields.Once large-scale application of memristor requires extremely stringent radiation resistance performance for the memristors.In order to improve the radiation resistance of memristors,it is necessary to explore the radiation effect mechanism and develop an effective radiation resistance technology.This paper summarizes the research status and trends of irradiation effects on memristors,describes the mechanism and analysis method of irradiation damage of memristor,and focuses on the irradiation effects of the memristors with transition metal oxide material system.Additionally,the possibility of scientific problems and key technologies are discussed,so as to provide some ideas for the radiation hardening and space application of memristor.

关 键 词：忆阻器 辐照效应 位移损伤 电离损伤 抗辐照加固 

分 类 号：TL99[核科学技术—核技术及应用]