高温外延炉温度控制的设计与应用  

Design and Application of Temperature Control for High Temperature Epitaxial Furnace

作　　者：毛朝斌 唐卓睿 伍三忠 罗骞 MAO Zhao-bin;TANG Zhuo-rui;WU San-zhong;LUO Qian(Ji Hua Laboratory)

机构地区：[1]季华实验室

出　　处：《中国集成电路》2022年第11期59-62,共4页China lntegrated Circuit

基　　金：季华实验室自主重大项目(X210241TC210)。

摘　　要：针对碳化硅外延工艺过程中温度控制精度对外延膜厚均匀性影响较大,本文介绍了一种用于感应加热碳化硅高温外延炉及温度控制系统。通过分析碳化硅外延工艺对温度控制的要求,设计了一套温度控制系统。在国产碳化硅外延设备上进行验证,实验结果表明温度控制系统具有较快的响应速度和较低的超调量,效果良好,能满足碳化硅高速外延需求。In the process of silicon carbide epitaxial technology,the temperature control accuracy has great influence on the thickness uniformity of the epitaxial film.In this paper,a high temperature epitaxial furnace and temperature control system for induction heating silicon carbide are introduced.A set of temperature control system is designed by analyzing the temperature control requirements of silicon carbide epitaxial process.The experimental results show that the temperature control system has fast response speed and low overshoot,which can meet the demand of silicon carbide high-speed epitaxy.

关 键 词：碳化硅 中频感应加热 温度控制 PID 

分 类 号：TN305[电子电信—物理电子学]