车用SiC半桥模块并联均流设计与试制  

Design and Trial Production of Parallel Current Sharing of SiC Half-Bridge Modules for Vehicles

作　　者：安光昊 谭会生[1] 戴小平 张泽 An Guanghao;Tan Huisheng;Dai Xiaoping;Zhang Ze(College of Traffic Engineering,Hunan University of Technology,Zhuzhou 412007,China;Coresing Semiconductor Technology Co.,Ltd.,Zhuzhou 412001,China)

机构地区：[1]湖南工业大学轨道交通学院,湖南株洲412007 [2]湖南国芯半导体科技有限公司,湖南株洲412001

出　　处：《半导体技术》2022年第10期809-816,838,共9页Semiconductor Technology

基　　金：湖南省教育厅科学研究重点资助项目(20A163)。

摘　　要：SiC芯片并联均流是影响车用SiC半桥模块可靠性的关键问题。寄生电感的不一致是造成芯片间电流不均衡的主要原因。首先,在ANSYS Simplorer中建立了芯片双脉冲仿真电路,分别研究了漏极、源极和栅极寄生电感对芯片间均流性的影响。然后,采用混合优化的均流方法设计并制作了一个多芯片并联的SiC半桥模块,其中,功率端子采用双端结构以减小寄生电感;栅极采用开尔文连接结构以提高芯片开关速度;对芯片位置进行优化使各并联回路的寄生电感尽可能均匀分布。在ANSYS Q3D中提取的主回路寄生电感为6.5 nH;在Simplorer中进行仿真,电流不均衡度小于3%。实物测试结果表明,主回路寄生电感为10 nH,电流不均衡度小于5%,验证了该车用SiC半桥模块并联均流设计的可行性。The parallel current sharing of SiC chips is a key issue affecting the reliability of SiC half-bridge modules for vehicles. The inconsistency of parasitic inductance is the main cause of current imba-lance between chips. Firstly, a chip double-pulse simulation circuit was established in ANSYS Simplorer, and the effects of drain, source and gate parasitic inductances on the current sharing between chips were studied, respectively. Then, a multi-chip parallel SiC half-bridge module was designed and fabricated by using the hybrid optimized current sharing method, in which the power terminal adopted a double-ended structure to reduce the parasitic inductance. The gate adopted Kelvin connection structure to improve the switching speed of the chip. The chip locations were optimized so that the parasitic inductance of each parallel loop circuit was distributed as evenly as possible. The parasitic inductance of the main loop circuit extracted in ANSYS Q3 D is 6.5 nH. The simulation results in Simplorer show that the current imbalance is less than 3%. The physical test results show that the parasitic inductance of the main loop circuit is 10 nH and the current imbalance is less than 5%,which verifies the feasibility of the parallel current sharing design of the SiC half-bridge modules for vehicles.

关 键 词：SiC金属氧化物半导体场效应晶体管(MOSFET) 并联均流 寄生电感 直接覆铜(DBC)基板 封装结构 

分 类 号：TN386.1[电子电信—物理电子学] TN45