高可靠IGBT模块温度循环及绝缘特性分析  

Thermal Cycle and Insulation Characteristics of High Reliable IGBT Module

作　　者：陈滔[1] 张彬彬[1] 许娜[1] 崔绪晨 CHEN Tao;ZHANG Binbin;XU Na;CUI Xuchen(Beijing Spacecraft,China Academy of Space Technology,Beijing 100190,China)

机构地区：[1]中国空间技术研究院北京卫星制造厂有限公司,北京100190

出　　处：《电子工艺技术》2022年第6期320-323,共4页Electronics Process Technology

基　　金：装发元器件领域工程项目(2009ZYGQ0301)。

摘　　要：随着我国武器装备系统复杂性提升和功率等级提升,对IGBT模块的需求剧增,IGBT可靠性直接影响装备系统的可靠性。选取同一封装不同材料陶瓷基板的IGBT模块,分别进行了温度循环试验和介质耐电压试验,对比4种IGBT模块的可靠性差异。结果表明,氮化硅陶瓷基板封装模块温度循环寿命和绝缘性能优于其他材料的陶瓷基板,1000次循环后介质耐压和外观检验结果合格,DBC基板陶瓷层几何参数与材料是影响可靠性的关键因素。With the increasing complexity and power level of weapon equipment system in China,the demand for IGBT module is increasing rapidly,and the reliability of IGBT directly affects the stability of equipment system.Thermal cycle test and dielectric voltage resistance test are carried out to compare the reliability difference of the four IGBT modules which encapsulated different ceramic substrates.The results show that the thermal cycle life and insulation performance of SiNceramic substrate are better than those of other ceramic substrates,the dielectric withstand voltage test and appearance are passing after 1000 thermal cycle.The geometry parameter and materials of DBC ceramic substrate are the key parameters which affect the reliability.

关 键 词：IGBT 温度循环 绝缘特性 

分 类 号：TN405[电子电信—微电子学与固体电子学]