P型SnO TFTs制备及其电学性能研究  

Preparation of P-Type SnO TFTs and their Electrical Performance

作　　者：龙玉洪 杨帆 王超[1,2] 王艳杰[1,2] 迟耀丹 杨小天[2,3] 邓洋 LONG Yuhong;YANG Fan;WANG Chao;WANG Yanjie;CHI Yaodan;YANG Xiaotian;DENG Yang(School of Electricity and Computer,Jilin Jianzhu University,Changchun 130118,China;Jilin Key Laboratory of Building Electrical Comprehensive Energy Conservation,Changchun 130118,China;JilinNormal University,Siping136000,China)

机构地区：[1]吉林建筑大学电气与计算机学院,长春130118 [2]吉林省建筑电气综合节能重点实验室,长春130118 [3]吉林省师范大学,四平136000

出　　处：《真空科学与技术学报》2022年第9期713-718,共6页Chinese Journal of Vacuum Science and Technology

基　　金：吉林省科技发展计划项目(20200201177JC);吉林省科技厅中央引导地方科研项目(202002012JC);吉林省教育厅科学技术研究项目(JJKH20210256KJ,JJKH20210277KJ,JJKH20210276KJ)。

摘　　要：采用直流磁控溅射结合光刻工艺,在室温下制备了p型SnO薄膜及薄膜晶体管器件。研究了直流磁控制备过程中的关键工艺问题。研究发现预溅射5 min、氧气比例为13%、生长压强为0.96 Pa、200℃退火1.5 h可制备高开关比的p型SnO薄膜晶体管。器件开关比可达到6.2×10~3,亚阈值摆幅为9.96 V·dec。通过延长退火时间至2 h,可以大幅提高线性区迁移率至1.61 cm^(2)·V^(-1)·S^(-1),且亚阈值摆幅仅增大了0.54 V·dec。通过延长预溅射时间至8 min,可以大幅提高p型SnO薄膜晶体管的载流子迁移率,器件线性区迁移率为5.25 cm^(2)·V^(-1)·S^(-1),饱和区迁移率为0.43 cm^(2)·V^(-1)·S^(-1)。P-type SnO thin films and thin-film transistors (TFTs) were prepared by DC magnetron sputtering combined with photoresist lithography at room temperature.The key technological issues in the preparation process of DC magnetic sputtering are comprehensively studied.It is found that p-type SnO thin-film transistors with a high on-off ratio can be obtained by pre-sputtering for 5 min,oxygen ratio of 13%,growth pressure of 0.96 Pa,and annealing at 200℃for 1.5 h.The on-off ratio is 6.2×10~3,and the subthreshold swing is 9.96 V·dec.By prolonging the annealing time (2 h),the mobility of the linear region can be greatly increased to 1.61 cm^(2)·V^(-1)·S^(-1),and the subthreshold swing only increases by 0.54 V·dec.By extending the pre-sputtering time to 8 min,it is found that the carrier mobility of the p-type SnO thin-film transistor is greatly improved,and the mobility in linear region and saturation region of the device is 5.25 and 0.43 cm^(2)·V^(-1)·S^(-1).

关 键 词：直流磁控溅射 氧化亚锡(SnO) 薄膜晶体管 开关比 

分 类 号：TN432[电子电信—微电子学与固体电子学]