一种基于GaN的0.5-4GHz高效率宽带功率放大器设计  

Design of 0.5-4GHz High Efficiency Broadband Power Amplifier Based on GaN

作　　者：邱俊杰 李武 QIU Jun-jie;LI Wu(Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,China)

机构地区：[1]宁波大学信息科学与工程学院,宁波315211

出　　处：《无线通信技术》2022年第3期35-39,45,共6页Wireless Communication Technology

基　　金：国家重点研发计划(2018YFB1802100);国家自然科学基金(62171242,61801252,U1809203,61631012);广东省重点领域研发计划(2019B010156004);浙江省省属高校基本科研业务费专项资金(SJLY2020001)。

摘　　要：宽带大功率微波功率放大器在通信发射机的应用越来越多,具有高击穿场强和高功率密度的优点的第三代半导体GaN技术越来越适用于宽带功率放大器的应用。本文基于GaN功率管的大信号仿真模型,采用宽带匹配技术进行功率管的匹配电路设计。通过ADS软件仿真和优化,设计了一款工作在0.5-4GHz宽频带范围的功率放大器。仿真结果显示,在0.5-4GHz内,功率附加效率(Power added efficiency, PAE)超过60%,增益大于11dB,增益平坦度为±1.5dB,且端口驻波性能良好,满足了发射机系统的要求。The application of broadband high-power microwave power amplifiers in communication transmitters is increasing, and the third-generation semiconductor GaN technology with the advantages of high breakdown field strength and high power density is more and more suitable for the application of broadband power amplifiers. Based on the large-signal simulation model of GaN power transistors, this paper adopts broadband matching technology to design the matching circuit of power transistors. Through the simulation and optimization of ADS software, a power amplifier working in the wide frequency range of 0.5-4 GHz is designed. The simulation results show that within 0.5-4 GHz, the power added efficiency(PAE) exceeds 60%, the gain is greater than 11 dB, the flatness is ±1.5 dB, and the port standing wave performance is good, which meets the requirements of the transmitter. system requirements.

关 键 词：宽带功率放大器 GAN 宽带匹配电路 PAE 

分 类 号：TN722[电子电信—电路与系统]