原子层淀积Si掺杂ZnO薄膜的光电性能研究  

Optical and Electrical Properties of Si Doped ZnO Films Grown by Atomic Layer Deposition

作　　者：张远[1,2] 张永兴 张金锋[1] 牟福生[1] ZHANG Yuan;ZHANG Yongxing;ZHANG Jinfeng;MOU Fusheng(School of Physics and Electronic Information,Huaibei Normal University,235000,Huaibei,Anhui,China;State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,200433,Shanghai,China)

机构地区：[1]淮北师范大学物理与电子信息学院,安徽淮北235000 [2]复旦大学微电子学院,专用集成电路与系统国家重点实验室,上海200433

出　　处：《淮北师范大学学报（自然科学版）》2022年第4期60-64,共5页Journal of Huaibei Normal University：Natural Sciences

基　　金：复旦大学专用集成电路与系统国家重点实验室开放课题(2019KF005);安徽省级“六卓越、一拔尖”卓越人才培养创新项目(2019zyrc054);安徽省高等学校自然科学研究项目(KJ2020A0029);物理学(师范)专业卓越教师培养创新项目(2020zyrc143);力学教学示范课(2020SJJXSFK2147)。

摘　　要：文章对原子层淀积(ALD)Si掺杂ZnO(SZO)薄膜的结构、电学和光学性能进行研究.通过生长ZnO和SiO2叠层的方法得到不同硅(Si)掺杂浓度的SZO薄膜,XRD测量结果表明,SZO薄膜为多晶结构,AFM测量结果表明,掺杂后样品的表面粗糙度变小.随着Si掺杂浓度的提高,SZO薄膜的载流子浓度先增大后减小,电阻率不断增大. SZO薄膜的可见光透射率在85%之上,光致发光谱表面SZO薄膜的发光以紫外光为主. ALD生长的SZO薄膜可以通过调整Si浓度对其光电性能进行精确调控,在透明导电薄膜、薄膜晶体管、紫外发光和探测器件方面有巨大的应用潜力.The structure,electrical and optical properties of Si doped ZnO(SZO)films grown by atomic layer deposition(ALD)were studied in this paper.SZO films with different Si doping concentrations were obtained by the growth of ZnO and SiO2stacking layers.The XRD results show that the SZO films are polycrystalline structure.The AFM results demonstrate that the surface roughness of the samples becomes smaller after dop⁃ing.With the increase of Si doping concentration,the carrier concentration first increases and then decreases,and the resistivity increases gradually.The visible light transmittance of the SZO film is above 85%.PL spec⁃tra indicate that all the SZO films show the dominant ultraviolet light emission.The optical and electrical properties of SZO films grown by ALD can be precisely controlled by adjusting the Si concentration,which has great potential in transparent conductivefilms,thin film transistors and ultraviolet light emitting and de⁃tecting devices.

关 键 词：Si掺杂 ZNO薄膜 原子层淀积 透光率 光致发光 

分 类 号：TN305.5[电子电信—物理电子学] TN307