基于CMOS工艺的综合射频P波段变频发射芯片设计  

Design of Integrated-RF P-Band Multifunctional Transmitter-Chip Based on CMOS Process

作　　者：张萌 王竣[3] 李烁星 胡彦胜 ZHANG Meng;WANG Jun;LI Shuoxing;HU Yansheng(Aerospace Science&Industry Academy of Communication Technology,Chengdu 610051,China;Joint Institute of Quantum Information and Communication SEU&ASIACT,Nanjing Jiangsu 211100,China;Chengdu Aerospace Communication Device Company limited,Chengdu 610051,China)

机构地区：[1]航天科工通信技术研究院有限责任公司,成都610051 [2]东南大学航天科工通信技术研究院量子信息与通信联合研究中心,江苏南京211100 [3]成都航天通信设备有限责任公司,成都610051

出　　处：《电子器件》2022年第5期1032-1038,共7页Chinese Journal of Electron Devices

基　　金：四川省科技计划项目;中国航天科工集团有限公司自主创新基金项目;成都市蓉漂计划项目。

摘　　要：射频微系统集成对芯片满足各种工程应用需求及产品化提出了更高的需求,也为通信-雷达-电子战一体化的综合射频系统理念构建提供有效支撑。本次设计的是一款基于CMOS工艺的P波段上变频发射芯片。CMOS工艺因其与数字电路的高集成度特性,以及量产后的相对低成本特性,在射频芯片领域受到越发广泛的关注。P波段一方面可以直接作为射频频率使用,另一方面也可以作为高频两次变频超外差收发机的中间频率,有较广泛的应用空间。本次设计除了追求综合指标性能,在可靠性、温度特性、静电防护等方面进行了充分考虑和专项附加设计,芯片的测试结果说明其性能充分满足应用需求。在-55℃到125℃全温范围内,具有约为10 dB适中的变频增益,并具有负温斜率,具备较高的各端口隔离度、线性度,覆盖-10 dBm到+10 dBm的本振功率适应性,在系统应用中具有较高的实用价值,验证了设计理论的正确性。The integrated applications of radio frequency micro system need the various requirements of RF chip products in the engineering application, which provide effective support for building an integrated RF system of communication, radar, and electronic warfare. A P-band transmitter chip with mixer is designed based on the CMOS process. Due to the high integration to digital circuits and the relatively low cost after mass production, the CMOS process has attracted increasingly wide attention to the field of RF chips. P-band can be directly used as RF frequency. On the other hand, it can be used as the intermediate frequency of super-heterodyne transceiver, which has a broad application space. Besides pursuing the comprehensive performance, the chip designed also takes the reliability, the temperature characteristic, and the electrostatic protection into full consideration. The test results of the chip indicate its performance satisfies the application requirements, which has moderate frequency conversion gain of approximately 10 dB with negative temperature slope, high isolation of each port, high linearity, and local oscillator power adaptability from-10 dBm to +10 dBm in full temperature range(-55 ℃~125 ℃). Therefore, it has high practical value of the system application, and also the correctness of its design theory has been validated.

关 键 词：CMOS芯片 P波段 发射变频 射频综合 

分 类 号：TP433[自动化与计算机技术]