28nm CMOS工艺8-Gbps SerDes单粒子辐射特性研究  

Research on Single-Event Radiation Characteristics of an 8-Gbps SerDes in a 28nm CMOS Technology

作　　者：文溢 陈建军[1] 梁斌[1] 池雅庆[1] 黄俊 WEN Yi;CHEN Jian-jun;LIANG Bin;CHI Ya-qing;HUANG Jun(College of Computer Science,National University of Defense Technology,Changsha,Hunan 410073,China)

机构地区：[1]国防科技大学计算机科学学院,湖南长沙410073

出　　处：《电子学报》2022年第11期2653-2658,共6页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61974163);国防科技大学高层次创新人才培训计划项目(No.4142D125106,No.434517212306)。

摘　　要：本文研究了28 nm体硅CMOS工艺下8-Gbps通用结构高速并转串/串转并接口(Serializer/Deserializer,SerDes)的单粒子辐射特性,该SerDes由电压模发送器(Transmitter,TX)和相位插值(Phase Interpolation,PI)型接收器(Receiver,RX)组成,通过双指数电流源对整个SerDes的TX和RX进行了单粒子效应仿真,仿真结果表明该SerDes的TX和RX均会发生单粒子瞬态(Single-Event Transient,SET),且主要敏感节点包括:D触发器,采样器和时钟相位插值器.进一步采用脉冲激光对整个SerDes进行了扫描测试,测试结果验证了仿真结论.该研究为抗辐射SerDes的研制提供了重要的理论依据.In this paper,single-event radiation characteristics of an8-Gbps high-speed Serializer/Deserializer interface(SerDes)is studied in a28nm bulk CMOS technology.The SerDes,which is composed of a voltage mode transmitter(TX)and a phase interpolating(PI)receiver(RX),is simulated by a double exponential current source to find the sensitive node,and the simulation results show both the TX and RX appear single-event transient(SET)and the main sensitive nodes of the whole SerDes include D flip-flop,samplers and clock phase interpolators.These sensitive nodes are further verified through pulsed-laser single-event experiment,and the study provides an important theoretical basis for the design of radiation-hardened SerDes.

关 键 词：串转并/并转串接口 单粒子效应 双指数电流源仿真 敏感节点 脉冲激光测试 

分 类 号：TN402[电子电信—微电子学与固体电子学]