CRH5型动车组用IGBT器件寿命评估  

Lifetime Estimation of IGBT Module for CRH5 EMU

作　　者：谌娟[1] 于凯 安军鹏 CHEN Juan;YU Kai;AN Junpeng(Automation College,Xi′an University of Technology,Xi′an 710048,China;Technical Center,CRRC Yongji Electric Co.,Ltd.,Yongji 044000,China)

机构地区：[1]西安理工大学自动化学院,陕西西安710048 [2]中车永济电机有限公司技术中心,山西永济044000

出　　处：《电工技术》2022年第22期102-104,共3页Electric Engineering

基　　金：2020年度山西省揭榜招标项目(编号20201101017)。

摘　　要：半实物仿真计算结果表明,CRH5型动车组四象限整流侧IGBT器件寿命长于逆变侧,机车频繁进站会降低IGBT器件寿命。典型线路计算时,最小寿命约为780万km。与寿命相关的测试表明,与全新同型号IGBT器件相比,运行480万km的IGBT器件芯片及DBC焊层超声波扫描未出现分层现象。饱和压降及键合点推力测试表明,键合线根部已经出现裂纹,导致饱和压降平均值比全新增加0.196%,IGBT芯片键合线推力均值由全新的2800 g降低到2400 g,FRD芯片键合线推力均值由全新的2800 g降低到2600 g及2300 g,退化后的测试电学参数均在额定值以内,未达到寿命失效标准。这些研究结果对寿命预测结果进行了初步的验证。The results of semi-physical simulation show that the life of IGBT devices on the four-quadrant rectifier side of CRH5 EMU is longer than that on the invert side,and frequent locomotive inbound decreases the life of IGBT devices.When calculating typical lines,the minimum lifetime is about 7.8 million km.The lifetime-related tests show that the ultrasonic scanning of IGBT chips and DBC solder layers running 4.8 million kilometers does not appear to be delaminated compared with the new IGBT devices of the same type.Saturation pressure drop and bond point thrust tests show that cracks have appeared at the roots of the bonding line,resulting in a 0.196%increase in the average saturation pressure drop over the new one.The average bond line thrust of IGBT chips decreased from 2800 g to 2400 g,and that of FRD chips decreased from 2800 g to 2600 g and 2300 g.The electrical parameters of the degraded test are within the rated value and do not meet the life failure standard.These findings provide preliminary validation of life prediction results.

关 键 词：IGBT器件寿命 CRH5型动车组 饱和压降 焊层超声波扫描 键合点推力 

分 类 号：TN32[电子电信—物理电子学]